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AbstractAbstract
[en] We present here a brief review of the Quantum Hall Effect in modulation doped heterojunctions
[fr]
Nous presentons dans cet article une revue succincte de l'Effet Hall Quantique dans les heterojonctions a dopage moduleOriginal Title
L'effet Hall quantique
Primary Subject
Source
465 p; ISBN 2-902731-81-7;
; 1984; p. 205-212; Les Editions de Physique; Les Ulis (France); Congress of the French physical society; Grenoble (France); 19-23 Sep 1983

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Sakai, J.W.L.
Nottingham Univ. (United Kingdom)1997
Nottingham Univ. (United Kingdom)1997
AbstractAbstract
No abstract available
Source
Oct 1997; [vp.]; Available from British Library Document Supply Centre- DSC:DXN014974; Thesis (Ph.D.)
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Vicentin, F.C.; Pudensi, M.A.A.
Proceedings of the 13. National Meeting on Condensed Matter Physics1990
Proceedings of the 13. National Meeting on Condensed Matter Physics1990
AbstractAbstract
[en] Published in summary form only
Original Title
Medida de descontinuidade da banda de conducao em heterojuncoes de GaAlAs usando contatos organicos
Source
Almeida Fonseca, A.L. de (Brasilia Univ., DF (Brazil)); Koiler, B. (Pontificia Univ. Catolica do Rio de Janeiro, RJ (Brazil)); Brescansin, L.M. (Universidade Estadual de Campinas, SP (Brazil)) (and others); Sociedade Brasileira de Fisica, Rio de Janeiro, RJ (Brazil); 284 p; 1990; p. 230; 13. National Meeting on Condensed Matter Physics; Caxambu, MG (Brazil); 8-12 May 1990; Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil
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AbstractAbstract
[en] An electrochemically controlled polymeric heterojunction working as a memristor, i.e., having memory properties, was investigated in pulse mode, mimicking synaptic behavior of signal transmission in biological systems. Influence of parameters such as pulse duration, interval between pulses, and value of potential base level was analyzed. Learning capabilities were shown to be reversible and repeatable for both potentiation and inhibition of signal transmission. The adaptive behavior of the element was investigated and was shown to be more efficient than the dc mode
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(c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
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Souza, P.G. de
Centro Latino Americano de Fisica (CLAF), Rio de Janeiro, RJ (Brazil)1980
Centro Latino Americano de Fisica (CLAF), Rio de Janeiro, RJ (Brazil)1980
AbstractAbstract
[en] Published in summary form only
Original Title
Estudos na heterojuncao Cds/Cu2S
Source
1980; 1 p; Latin American Colloquium on Surface Physics; Niteroi, RJ (Brazil); 1 Dec 1980
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Harrison, P.A.
Nottingham Univ. (United Kingdom)1997
Nottingham Univ. (United Kingdom)1997
AbstractAbstract
No abstract available
Source
May 1997; [vp.]; Available from British Library Document Supply Centre- DSC:DXN014370; Thesis (Ph.D.)
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AbstractAbstract
[en] We present here recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (author)
[pt]
Discutem-se neste trabalho, resultados experimentais recentes obtidos em estruturas semicondutoras a duas dimensoes chamadas heterojuncoes e superlatices. Esta revisao inclui experimentos em otica e transporte e descreve rapidamente algumas pesquisas que acredita-se serem importantes, no ponto de vista de fisica fundamental. (A.C.A.S.)Source
1. Brazilian School on Semiconductor Physics; Campinas, SP (Brazil); 31 Jan - 11 Feb 1983
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AbstractAbstract
[en] In this paper, it is discussed the electronic structure of semiconductor interfaces, oxidation and oxide layers, semiconductor heterojunctions and superlatices, rectifying metal-semiconductor, contacts and interface reactions. It is also discussed the role of large-scale scientific computation, as well as, the nature of theoretical models. (A.C.A.S.)
[pt]
Neste trabalho, estuda-se a estrutura eletronica de interfaces semicondutoras, oxidacao e camadas oxidantes, heterojuncoes semicondutores e superlatices, contatos retificadores de metais semicondutores e reacoes de interface. Discute-se ainda o papel dos computadores cientificos de larga escala e a natureza dos modelos teoricos empregados. (A.C.A.S.)Source
1. Brazilian School on Semiconductor Physics; Campinas, SP (Brazil); 31 Jan - 11 Feb 1983
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Davydov, S. Yu., E-mail: Sergei.Davydov@mail.ioffe.ru2007
AbstractAbstract
[en] Electron affinities are calculated in the form of linear functions of the degree of hexagonality by two different methods using the concept of band offsets in heterojunctions formed by 3C-SiC in contact with a non-cubic polytype
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Source
Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
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Timofeev, V.I.; Faleeva, E.M.
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 2. Abstracts2009
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 2. Abstracts2009
AbstractAbstract
No abstract available
Original Title
Model' geterotranzistora s kvantovymi tochkami
Primary Subject
Source
Machulin, V.F. (ed.); Naukova Rada z Problemi 'Fyizika Napyivprovyidnikyiv ta Napyivprovyidnikovyi Pristroyi' pri VFN Natsyional'noyi Akademyiyi Nauk Ukrayini, Kyiv (Ukraine); Myinyisterstvo Osvyiti yi Nauki Ukrayini, Kyiv (Ukraine); Ukrayins'ke Fyizuchne Tovaristvo, Odesa (Ukraine); Yinstitut Fyiziki im. Lashkaryova NAN Ukrayini, Kyiv (Ukraine); Klasichnij Privatnij Universitet, Zaporizhzhya (Ukraine); Zaporyiz'kij Natsyional'nij Tekhnyichnij Universitet, Zaporyizhzhya (Ukraine); Zaporyiz'kij Natsyional'nij Universitet, Zaporyizhzhya (Ukraine); VAT 'Zavod Napyivprovyidnikyiv', Zaporyizhzhya (Ukraine); Akademyiya Nauk Vishchoyi Shkoli, Kyiv (Ukraine); 231 p; ISBN 978-966-414-058-1;
; 2009; p. 26-27; USCPS-4: 4. Ukrainian Scientific Conference on Semiconductor Physics. Conference dedicated to the 50 anniversary of the Institute of Semiconductor Physics after V.E. Lashkaryov of NASU foundation; 4. Ukrayins'ka Naukova Konferentsyiya z Fyiziki Napyivprovyidnikyiv (UNKFN-4). Konferentsyiya prisvyachena 50-ryichchyu stvorennya Yinstitutu Fyiziki Napyivprovyidnikyiv yim. V.Je. Lashkaryova NAN Ukrayini; Zaporyizhzhya (Ukraine); 15-19 Sep 2009; Available from Ukrainian INIS Centre

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