Results 1 - 10 of 3680
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[en] Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination
[en] The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
[en] High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons
[en] Highlights: • In this manuscript, we have prepared the In2O3 NBs and Er-In2O3 NBs by carbon thermal reduction at low temperature (1060 °C). • Good Ohmic contact between the In2O3 NB and electrodes reveals that the resistance of the device is constant at the same temperature. • The results have shown that the Er-In2O3 NB sensor has well selectivity and high sensitivity. In addition, we have calculated the theoretical detection limit of the Er-In2O3 NB sensor to alcohol, which is 176 ppb. • Finally, the gas-sensing mechanism has been described and the doping of Er leads to the sensitive properties of the sensor have been improved. Pure In2O3 NBs and Er-In2O3 NBs have been successfully synthesized by carbon thermal reduction. The doping of Er leads the optimal temperature of the In2O3 to decrease. The response of the Er-In2O3 sensor to 100 ppm of alcohol is 4.8 at 220 °C, which is twice larger than that of the pure In2O3 sensor. It is also found that the doping of Er has increased the performance of the sensors. Moreover, Er-In2O3 sensor has a fast response (recovery) time to different concentration of alcohol at 220 °C. In addition, the mechanism of pure In2O3 sensor and Er-In2O3 sensor are discussed.
[en] The possibility for preparing of a position sensitive photodetectors (PSP) on the base of In2O3(Te, Sn)/Si heterojunction has been investigated. The transparent and conductive thin films of In2O3 doped with Te or Sn were deposited by the spraying method onto heated at 480 deg C n-Si substrates. Metal electrodes were made by vaccuum evaporation. The inversion characteristics of the structure were measured
[en] We report on the effect of oxygen vacancies on the defect-related emission and the electronic properties of In2O3 nanowires. The nanowires were synthesized by vapor phase transport and had diameters ranging from 80–100 nm and lengths over 10–20 μm, with a growth direction of [0 0 1]. The as-grown nanowires connected in an FET type of configuration show n-type conductivity, which is ascribed to the presence of intrinsic defects like oxygen vacancies in the nanowire. The resistivity, transconductance, field effect mobility and carrier concentration of the In2O3 nanowires were determined to be 1.82 × 10−2 Ω cm, 11.2 nS, 119 cm2 V−1 s−1 and 4.89 × 1017 cm−3, respectively. The presence of oxygen vacancies was also confirmed by photoluminescence measurements, which show a strong UV emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. We present a technique of post-growth annealing in O2 environment and passivation with (NH4)2S to reduce the defect-induced emission. (paper)
[en] Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm2/Vs with a relatively good on/off current ratio of 104 at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.