Filters
Results 1 - 10 of 4482
Results 1 - 10 of 4482.
Search took: 0.029 seconds
Sort by: date | relevance |
Friedman, D.J.; Kibbler, A.E.; Kurtz, S.R.
National Renewable Energy Lab., Golden, CO (United States). Funding organisation: US Department of Energy (United States)1999
National Renewable Energy Lab., Golden, CO (United States). Funding organisation: US Department of Energy (United States)1999
AbstractAbstract
[en] This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics
Primary Subject
Secondary Subject
Source
2 Nov 1999; [vp.]; Available from OSTI as DE00014402
Record Type
Miscellaneous
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Ismailov, I.; Hasanov, T.
Academy of Siences of Republic of Tajikistan, Dushanbe (Tajikistan)2006
Academy of Siences of Republic of Tajikistan, Dushanbe (Tajikistan)2006
AbstractAbstract
[en] The article studies electric and spectrum characteristics and performance of solar cell battery with vertical p-n junction on the base of Ga In P As/In P graded-gap heterostructure grown by liquid epitaxy. The performance of solar cell battery contained 3 diodes assembled in a single model u is amounted to∼3.5% under centuple concentration of solar radiation
Original Title
Nekotorie harakteristiki solnechnih elementov s vertikal'nimi p-n-perehodami na osnove varizonnih geterostruktur GaInPAs/InP
Primary Subject
Source
Bulletin of Astrophysical Institute; v. 49(3); 2006; [p. 230-234]; Available from the INIS Liaison Officer of the Republic of Tajikistan, Mr. Ilkhom Mirsaidov, Head, Tajik INIS Centre Nuclear and Radiation Safety Agency, Academy of Sciences of the Republic of Tajikistan, 33 Rudaki Ave. 734025, Dushanbe, Republic of Tajikistan
Record Type
Miscellaneous
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Suemitsu, Tetsuya, E-mail: sue@aecl.ntt.co.jp2007
AbstractAbstract
[en] The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented
Primary Subject
Source
ICMAT 2004: 3. International conference on materials for advanced technologies: Symposium J-III-V- Semiconductors for microelectronic and optoelectronic applications; Singapore (Singapore); 3-8 Jul 2005; S0040-6090(06)00922-9; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs. (semiconductor devices)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1674-4926/30/12/124006; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Semiconductors; ISSN 1674-4926;
; v. 30(12); [5 p.]

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration
Primary Subject
Secondary Subject
Source
Katz, A. (AT and T Bell Laboratories, Murray Hill, NJ (USA)); Murarka, S.P. (Rensselaer Polytechnic Institute, Troy, NY (USA)); Appelbaum, A. (Rockwell International Corporation, Newbury Park, CA (USA)); 633 p; ISBN 1-55899-070-4;
; 1990; p. 473-480; Materials Research Society; Pittsburgh, PA (USA); Spring meeting of the Materials Research Society (MRS); San Francisco, CA (USA); 16-21 Apr 1990; CONF-900466--; Materials Research Society, 9800 McKnight Rd., Suite 327, Pittsburgh, PA 15237 (USA)

Record Type
Book
Literature Type
Conference
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Short communication
Primary Subject
Source
11. conference on solid and liquid crystals - materials science and applications; Zakopane (Poland); 23-27 Oct 1994
Record Type
Journal Article
Literature Type
Conference
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Hashassi, M; Ramzi, A; Kourchid, K; Mbarki, M; Rebey, A, E-mail: mourad.mbarki@issatgb.rnu.tn2019
AbstractAbstract
[en] In this work, we report on changes in structure stability and electronic properties of clean and Bi-adsorbed InP(001) surface under different growth conditions. Based on the variety of reconstruction surfaces of InP(001) clean surface, we have calculated the surface energy diagram. Our results match very well with those reported in literature. The given α 2 and β 2 structures for clean InP(001) (2 × 4) surface were proposed for Bi/InP(001). We have considered seven models for each Bi/InP(001)-α 2 and β 2 structures having different Bi coverage. Details of geometry, structural stability and electronic properties for the studied models are given and compared with available results in literature. (paper)
Primary Subject
Secondary Subject
Source
Available from http://dx.doi.org/10.1088/2053-1591/ab3751; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Materials Research Express (Online); ISSN 2053-1591;
; v. 6(10); [21 p.]

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] N-type InP single crystals have been grown by the SSD method, and their Hall mobility and photoluminescence investigated. The weak field Hall mobilities were measured at 300K for several undoped and Sn-doped samples with carrier concentrations between 10sup(16) and 10sup(19)cmsup(-3). The mobility data are compared with other existing experimental data and with the recent theoretical curve of Nag et al. The photoluminescence emission spetra of undoped SSD- and LEC-crystals were taken at 77K, and the results are in good agreement. (Author)
Record Type
Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884;
; v. 17(1); p. 87-90

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Soltz, D.; Decker, F.; Cascato, L.
Proceedings of the 14. National Meeting on Condensed Matter Physics. v.21991
Proceedings of the 14. National Meeting on Condensed Matter Physics. v.21991
AbstractAbstract
[en] Published in summary form only
Primary Subject
Source
Sociedade Brasileira de Fisica, Sao Paulo, SP (Brazil); 201 p; 1991; p. 368; 14. National Meeting on Condensed Matter Physics; Caxambu, MG (Brazil); 7-11 May 1991
Record Type
Miscellaneous
Literature Type
Conference
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Wen, X M; Lincoln, C; Smith, T A; Dao, L V; Hannaford, P, E-mail: xwen@unimelb.edu.au2009
AbstractAbstract
[en] In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.
Primary Subject
Source
S0022-3727(09)88045-5; Available from http://dx.doi.org/10.1088/0022-3727/42/4/045115; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
1 | 2 | 3 | Next |