[en] This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics

[en] The article studies electric and spectrum characteristics and performance of solar cell battery with vertical p-n junction on the base of Ga In P As/In P graded-gap heterostructure grown by liquid epitaxy. The performance of solar cell battery contained 3 diodes assembled in a single model u is amounted to∼3.5% under centuple concentration of solar radiation

[en] The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented

[en] A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs. (semiconductor devices)

[en] This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

[en] Short communication

[en] In this work, we report on changes in structure stability and electronic properties of clean and Bi-adsorbed InP(001) surface under different growth conditions. Based on the variety of reconstruction surfaces of InP(001) clean surface, we have calculated the surface energy diagram. Our results match very well with those reported in literature. The given α ₂ and β ₂ structures for clean InP(001) (2 × 4) surface were proposed for Bi/InP(001). We have considered seven models for each Bi/InP(001)-α ₂ and β ₂ structures having different Bi coverage. Details of geometry, structural stability and electronic properties for the studied models are given and compared with available results in literature. (paper)

[en] N-type InP single crystals have been grown by the SSD method, and their Hall mobility and photoluminescence investigated. The weak field Hall mobilities were measured at 300K for several undoped and Sn-doped samples with carrier concentrations between 10sup(16) and 10sup(19)cmsup(-3). The mobility data are compared with other existing experimental data and with the recent theoretical curve of Nag et al. The photoluminescence emission spetra of undoped SSD- and LEC-crystals were taken at 77K, and the results are in good agreement. (Author)

[en] Published in summary form only

[en] In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.