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[en] Full text: Scaling of semiconductor technology (CMOS) has been the driving force for the success of information technology. However, as device dimensions continue to shrink into the nanometer length-scale regime, conventional semiconductor technology will be approaching fundamental physical limits. New strategies, including the use of novel materials and 1D-device concepts, innovative device architectures, and smart integration schemes need to be explored and assessed. They are crucial to extend current capabilities and maintain momentum beyond the end of the technology roadmap time frame (post-CMOS era). (author)
[en] Highlights: • Ab-initio study of magnetic Heusler compounds. • GW has an important effect on the band gap and transition energies of spin-filter materials. • GW has littile effect in the case of spin-gapless semiconductors. - Abstract: Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic and magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the GW approximation to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of GW self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.
[en] The paper discusses the most important results on electron paramagnetic resonance (EPR) in semimagnetic semiconductors (SMSC) and magnetic properties of SMSC. The purpose of the present paper is to consider the magnetic resonance theory in SMSC. An unusual temperature dependence of the EPR linewidth in SMSC at low temperatures has also been considered. A detailed theory of the EPR linewidth and lineshift has been developed using Green Function method and taking into account all the basic interactions existing in SMSC. The attempt to develop the nuclear magnetic resonance (NMR) theory and to formulate the criterion of the possibility of NMR osbervation in SMSC has also been made in the present paper. (author). 47 refs.; 4 figs
[en] This book consists of 11 chapters. It covers basic quantum theory, schrodinger wave equation and value as well as probability and statistical mechanics in chapter 1- chapter 3. In chapter 4 and 5, it deals with state of materials determination and structure of materials determination. You will also study properties of materials such as electrical, magnetic, optical, thermal and mechanical ones in from chapter 6 to chapter 8. Lastly, you will learn semiconductor electronic theory, semiconductor devices and analysis method and principle of materials from chapter 9 to chapter 11.
[en] The fundamental physical processes associated with small-polaron formation are described with various magnetic semi-conductors being cited as examples. Attention is then directed toward the mechanisms of charge transfer and small-polaron hopping motion in magnetic semiconductors
[en] We have fabricated Mn-doped chalcopyrite ZnGeAs2 and ZnSnAs2 single crystals using vertical temperature gradient method. We have found out that Mn-doped ZnSnAs2 and ZnSnAs2 single crystals showed room-temperature ferromagnetism with Curie temperature of 333 and 329 K, respectively
[en] This book contains nine chapters, which are introduction of manufacture of semiconductor chip, oxidation such as Dry-oxidation, wet oxidation, oxidation model and oxide film, diffusion like diffusion process, diffusion equation, diffusion coefficient and diffusion system, ion implantation, including ion distribution, channeling, multiimplantation and masking and its system, sputtering such as CVD and PVD, lithography, wet etch and dry etch, interconnection and flattening like metal-silicon connection, silicide, multiple layer metal process and flattening, an integrated circuit process, including MOSFET and CMOS.
[en] This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.
[en] This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.
[en] This book consists of seven chapters, which are the flow of the age from macro world to micro world, what is MEMS, semiconductor, micro machining and MEMS, where do MEMS goes to?, How to make MEMS, MEMS in the future and knowing about MEMS more than. This book is written to explain in ease and fun. It deals with MEMS in IT, BT, NT, ST, micro robot technology, basic process for making MEMS such as Bulk micromachining, surface micromachining LGA technology, DARPA and organization in domestic and overseas and academy and journal related MEMS.