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AbstractAbstract
[en] The experimental proof of the fact that, under a strong uniaxial elastic deformation of n-Ge samples, the isoenergetic ellipsoids are displaced only relatively on the energy scale, whereas the shape of ellipsoids remains unchanged , is obtained
Original Title
Eksperimental'nij dokaz nezmyinnostyi formi yizoenergetichnikh elyipsoyidyiv n-Ge v umovakh sil'noyi odnovyisnoyi pruzhnoyi deformatsyiyi
Primary Subject
Record Type
Journal Article
Journal
Dopovyidyi Natsyional'noyi Akademyiyi Nauk Ukrayini; ISSN 1025-6415;
; (no.6); p. 68-73

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Turaev, Yu.T.; Turaev, Eh.Yu.; Zhuraev, Sh.Kh.
Abstracts of 6. International conference 'Nuclear and Radiation Physics'2007
Abstracts of 6. International conference 'Nuclear and Radiation Physics'2007
AbstractAbstract
[en] Role of electro-thermal and shock-thermal (ST) mechanisms in generation-recombination processes is analyzed. N-type conductor in which there are hydrogen-like round neutral centers is studied. Capture of positive charged centers under quasi-elastic interaction with acoustic phonons taking place in the cascade mechanism result. Probability of ST-capture of electron with energy ε on the positive charged centers is gotten
Original Title
Kombinatsionnye mekhanizmy generatsionno-rekombinatsionnykh protsessov v poluprovodnikakh
Primary Subject
Source
Natsional'nyj Yadernyj Tsentr Respubliki Kazakhstan, Kurchatov (Kazakhstan); Inst. Yadernoj Fiziki Natsional'nogo Yadernogoj Tsentra Respubliki Kazakhstan, Almaty (Kazakhstan); 726 p; ISBN 9965-675-37-6;
; 2007; p. 302-305; 6. International conference 'Nuclear and Radiation Physics'; 6. Mezhdunarodnaya konferentsiya 'Yadernaya i Radiatsionnaya Fizika'; Almaty (Kazakhstan); 4-7 Jun 2007; 3 refs.

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Book
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AbstractAbstract
[en] The elastic constants in semiconductor (Ge) have been measured as a function of temperature from 0 deg C to 50g deg C and at frequencies of 4MHz. The experiments were made using the pulse-echo technique with longitudinal and transversal sound pulses along the [111] and [100] crystallographic axis. For the determination of the propagation velocities of ultrasonic waves we used a particular method, called interferometrical method with a fixed reference point. We found empirical relations of the variation of elastic constants with temperature when the values of the elastic constants at OK are known. (author)
Original Title
Variatia cu temperatura a constantelor elastice in Ge
Record Type
Journal Article
Journal
Studii si Cercetari de Fizica; ISSN 0039-3940;
; v. 32(8); p. 829-835

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AbstractAbstract
[en] Full Text: The results on crystalomorphological and goniometrical research of n -type Ge1-x-Six filamentous crystals which has been brought up by a method of chemical transport reactions in closed bromide system at various gradients in presence of gold, as initiator of growth are described
Original Title
Formi rosta nitevidnikh kristallov Ge-Si n-tipa, poluchennikh metodom khimiceskikh
Source
Available in abstract form only, full text entered in this record; Translated from Russian
Record Type
Journal Article
Literature Type
Translation
Journal
Transactions of Azerbaijan National Academy of Sciences. Series of Physical-Technical and Mathematical Sciences. Physics and Astronomy; ISSN 2304-7453;
; v. 117(5); 5 p

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Belokurova, I.N.; Garnyk, V.S.; Degtyarev, V.F.; Skudnova, E.V.; Khavzhu, D.M.
Riecansky (V.E.) Technical Translations, Balsham, Cambridge (United Kingdom)1991
Riecansky (V.E.) Technical Translations, Balsham, Cambridge (United Kingdom)1991
AbstractAbstract
[en] Electrical resistivity and minority change carrier lifetime have been studied as a function of fluence in electron irradiated n-type germanium doped with isovalent impurities such as tin or silicon (or both). It has been shown that doping n-type germanium with tin stabilizes minority charge carrier lifetime in irradiated material. (author)
Primary Subject
Secondary Subject
Source
1991; 3 p; Available from The British Library Document Supply Centre, Boston Spa, Wetherby, West Yorks. LS23 7BQ; Translated from Fizika i Khimiya Obrabotki Materialov (Sep-Oct 1990) v. 24(5) p. 5-8.
Record Type
Report
Literature Type
Translation
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Gruen, D.M.
Argonne National Lab., IL (USA)1978
Argonne National Lab., IL (USA)1978
AbstractAbstract
[en] In this paper, the nature of the surface states of n-type TiO2 and SrTiO3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored
Primary Subject
Source
1978; 19 p; Available from NTIS., PC A02/MF A01
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Report
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AbstractAbstract
No abstract available
Original Title
Vliyanie ehlektricheskogo polya na anomal'nuyu fotoprovodimost' v monocrystallakh n-InSe
Secondary Subject
Source
8 refs.; published in summary form only; for English translation see the journal Sov. Phys. - Semicond.
Record Type
Journal Article
Journal
Fizika i Tekhnika Poluprovodnikov; v. 10(5); p. 980-981
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Melkonyan, S.V.
Izvestia Natsional'noj Akademii Nauk Armenii, Yerevan (Armenia)2001
Izvestia Natsional'noj Akademii Nauk Armenii, Yerevan (Armenia)2001
AbstractAbstract
[en] The reasons of appearance of the current carrier mobility fluctuation in homogeneous and non-degenerate n-type semiconductors are discussed. The characteristic properties of relaxation of the fluctuation of electron distribution function in the interacting electron-phonon system are revealed. 10 refs
Original Title
K voprosu o fluktuatsii podvizhnosti nositelej toka v poluprovodnikakh
Primary Subject
Record Type
Journal Article
Journal
Izvestiya National'noj Akademii Nauk Armenii. Fizika; ISSN 1025-5613;
; v. 36(3); p. 142-147

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Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An
International Centre for Theoretical Physics, Trieste (Italy)1993
International Centre for Theoretical Physics, Trieste (Italy)1993
AbstractAbstract
[en] The electron mobility at low temperatures is calculated for a slightly compensated heavily doped sample of GaAs which undergoes a thermal treatment. Account is taken of high-temperature ionic correlation and low-temperature electronic screening as well. The numerical result is found to be in very good agreement with experimental data, especially at the highest impurity concentrations. (author). 21 refs, 1 fig., 1 tab
Source
Jun 1993; 9 p
Record Type
Report
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Kurt, H.Y.; Sadiq, Y; Salamov, B.G.
The fifth international scientific technical conference dedicated to the eighteen fifth anniversary of Haydar Aliyev2008
The fifth international scientific technical conference dedicated to the eighteen fifth anniversary of Haydar Aliyev2008
AbstractAbstract
[en] Nonlinear transport of GaAs detector in semiconductor gas discharge IR image converter (SGDIC) are studied experimentally for a wide range of the gas pressures and inter electrode distances. A SGDIC structure with N-shaped CVC was analyzed using both the current and discharge light emission (DLE) data, which shows the electrical instability in the detector. It is established that NDC is related to electron capture and emission from EL2 deep center on the material, as a consequence, to oscillations in current when a dc voltage of a high enough magnitude is applied to a photo detector. We have studied the pressure and illumination dependencies of the current versus voltage characteristics for S I GaAs: Cr detector. Transition from secondary electron emission to thermionic emission on the photocathode is accompanied by a current relatively sharp drop in the dependences of charge voltage
Source
Ministry of Education of Azerbaijan Republic, National Academy of Aviation, Baku State University, Azerbaijan Technical University, Baku (AZ); [vp.]; Jun 2008; p. 95-98; 5. international scientific technical conference dedicated to 85. anniversary of Haydar Aliyev; Pyatoy mejdunarodnoy nauchno-texnicheskoy konferencii posvyashennoy 85-letiyu Geydara Alieva; Baku (Azerbaijan); 25-27 Jun 2008; Available from Azerbaijan National Academy of Sciences, Baku, Azerbaijan; 3 figs
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Miscellaneous
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