[en] The experimental proof of the fact that, under a strong uniaxial elastic deformation of n-Ge samples, the isoenergetic ellipsoids are displaced only relatively on the energy scale, whereas the shape of ellipsoids remains unchanged , is obtained

[en] Role of electro-thermal and shock-thermal (ST) mechanisms in generation-recombination processes is analyzed. N-type conductor in which there are hydrogen-like round neutral centers is studied. Capture of positive charged centers under quasi-elastic interaction with acoustic phonons taking place in the cascade mechanism result. Probability of ST-capture of electron with energy ε on the positive charged centers is gotten

[en] The elastic constants in semiconductor (Ge) have been measured as a function of temperature from 0 deg C to 50g deg C and at frequencies of 4MHz. The experiments were made using the pulse-echo technique with longitudinal and transversal sound pulses along the [111] and [100] crystallographic axis. For the determination of the propagation velocities of ultrasonic waves we used a particular method, called interferometrical method with a fixed reference point. We found empirical relations of the variation of elastic constants with temperature when the values of the elastic constants at OK are known. (author)

[en] Full Text: The results on crystalomorphological and goniometrical research of n -type Ge₁-x-Si_x filamentous crystals which has been brought up by a method of chemical transport reactions in closed bromide system at various gradients in presence of gold, as initiator of growth are described

[en] Electrical resistivity and minority change carrier lifetime have been studied as a function of fluence in electron irradiated n-type germanium doped with isovalent impurities such as tin or silicon (or both). It has been shown that doping n-type germanium with tin stabilizes minority charge carrier lifetime in irradiated material. (author)

[en] In this paper, the nature of the surface states of n-type TiO₂ and SrTiO₃ is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

No abstract available

[en] The reasons of appearance of the current carrier mobility fluctuation in homogeneous and non-degenerate n-type semiconductors are discussed. The characteristic properties of relaxation of the fluctuation of electron distribution function in the interacting electron-phonon system are revealed. 10 refs

[en] The electron mobility at low temperatures is calculated for a slightly compensated heavily doped sample of GaAs which undergoes a thermal treatment. Account is taken of high-temperature ionic correlation and low-temperature electronic screening as well. The numerical result is found to be in very good agreement with experimental data, especially at the highest impurity concentrations. (author). 21 refs, 1 fig., 1 tab

[en] Nonlinear transport of GaAs detector in semiconductor gas discharge IR image converter (SGDIC) are studied experimentally for a wide range of the gas pressures and inter electrode distances. A SGDIC structure with N-shaped CVC was analyzed using both the current and discharge light emission (DLE) data, which shows the electrical instability in the detector. It is established that NDC is related to electron capture and emission from EL2 deep center on the material, as a consequence, to oscillations in current when a dc voltage of a high enough magnitude is applied to a photo detector. We have studied the pressure and illumination dependencies of the current versus voltage characteristics for S I GaAs: Cr detector. Transition from secondary electron emission to thermionic emission on the photocathode is accompanied by a current relatively sharp drop in the dependences of charge voltage