[en] The elastic constants in semiconductor (Ge) have been measured as a function of temperature from 0 deg C to 50g deg C and at frequencies of 4MHz. The experiments were made using the pulse-echo technique with longitudinal and transversal sound pulses along the [111] and [100] crystallographic axis. For the determination of the propagation velocities of ultrasonic waves we used a particular method, called interferometrical method with a fixed reference point. We found empirical relations of the variation of elastic constants with temperature when the values of the elastic constants at OK are known. (author)

[en] The experimental proof of the fact that, under a strong uniaxial elastic deformation of n-Ge samples, the isoenergetic ellipsoids are displaced only relatively on the energy scale, whereas the shape of ellipsoids remains unchanged , is obtained

[en] Full Text: The results on crystalomorphological and goniometrical research of n -type Ge₁-x-Si_x filamentous crystals which has been brought up by a method of chemical transport reactions in closed bromide system at various gradients in presence of gold, as initiator of growth are described

[en] Role of electro-thermal and shock-thermal (ST) mechanisms in generation-recombination processes is analyzed. N-type conductor in which there are hydrogen-like round neutral centers is studied. Capture of positive charged centers under quasi-elastic interaction with acoustic phonons taking place in the cascade mechanism result. Probability of ST-capture of electron with energy ε on the positive charged centers is gotten

[en] Electrical resistivity and minority change carrier lifetime have been studied as a function of fluence in electron irradiated n-type germanium doped with isovalent impurities such as tin or silicon (or both). It has been shown that doping n-type germanium with tin stabilizes minority charge carrier lifetime in irradiated material. (author)

[en] In this paper, the nature of the surface states of n-type TiO₂ and SrTiO₃ is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

No abstract available

[en] In this study, we have investigated the source of the n-type conductivity in bulk ZnO. Four samples with Zn concentrations 52%, 53%, 54% and 55 % were prepared by molecular beam epitaxy (MBE). ZnO layers exhibited remarkable increase in carrier concentration (5.0 X 10/sup 16/ cm/sup -3/ to 2.2 X 10/sup 19/ cm/sup -3/) and decrease in resistivity (14.4 O cm to 0.009 O cm) as a function of Zn contents (52% to 55%) in the layers, respectively. We observed that with increasing thickness, the microstructure of films was improved. The thick films have less Zn-interstitials defects and consequently have lower carrier concentration and higher resistivity. The shifting of Raman E2 high mode of ZnO towards higher frequency with increasing Zn contents in the samples also confirmed the presence of excessive Zn-interstitials in the layer. (author)

No abstract available

[en] The reasons of appearance of the current carrier mobility fluctuation in homogeneous and non-degenerate n-type semiconductors are discussed. The characteristic properties of relaxation of the fluctuation of electron distribution function in the interacting electron-phonon system are revealed. 10 refs