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[en] Four methods are presented and compared. The ''exact'' numerical method of Chawla and Gummel provides correct results, in good agreement with the experiment, up to forward bias in the range of the built-in voltage Vsub(b). The other methods presented are based on the ASCE approximation. Their results are in agreement with the ''exact'' ones for reverse and forward bias up to a value less than Vsub(b) by approximately 0.2V. (author)
[en] This invention relates to a radiative generator, in other words a device capable of generating an electric current from radiations such as α, β or γ-ray emissions from radioelements, particularly as waste. These radiations are directed to a p-n junction by means of compounds able to absorb all or part of the radiation energy and to return it under a greater wave length into the optimum absorption region of the p-n junction. The compounds are distributed in a matrix made in a synthesis substance placed between the radioelements and the junction, a subsrance transparent to the radiations in question
[fr]La presente invention concerne un generateur radiatif, c'est-a-dire un dispositif susceptible d'engendrer un courant electrique a partir de radiations telles que les rayonnements α, β ou γ provenant de radio-elements, notamment, sous forme de dechets. Ces rayonnements sont envoyes sur une jonction p-n par l'intermediaire de composes aptes a absorber tout ou partie de l'energie de rayonnement et a la restituer sous une plus grande longueur d'onde dans la zone d'absorption optimale de la jonction p-n. Les composes sont repartis dans une matrice realisee en matiere synthetique interposee entre les radio-elements et la jonction, matiere transparente aux rayonnements en cause
[en] The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels. (paper)
[en] BiVO4/BiOCl p-n junctioned photocatalysts were synthesized by surface replacement of pre-synthesized BiOCl with BiVO4 via a hydrothermal route. BiVO4 particles were decorated on the surface of BiOCl, the structures of which were favored of maximizing absorption of visible light. The photocatalytic activity of the herterojunctioned composites were evaluated by degradation of Rhodamine B (RhB) dye under visible light illumination. The results indicated that the composites exhibited superior efficiencies for RhB photodegradation in comparison with pure BiOCl, BiVO4 and BiOCl/BiVO4 with similar compositions. The 30% BiVO4/BiOCl exhibited an optimal photocatalytic activity due to the combinative effects of large visible-light absorbance and formation of p-n junction. An effective built-in electric field was formed by the interface between p-type BiOCl and n-type BiVO4, which promoted the efficient separation of photoinduced electron-hole pairs. Experiments on scavenging active intermediates demonstrated that the enhanced photoactivity was primarily attributed to the photogenerated holes of BiVO4. (paper)
[en] Silicon p-n junction is used as a temperature sensor with high sensitivity and ideal linearity for measurement of thermal conductivity of heat insulating material by dynamic method. Fully automated apparatus using a microcomputer IBM/PC equipped with a digital memory oscilloscope is presented. It is shown that the accuracy of the method is improved and the time required for measurement and evaluation of the experimental results is considerably reduced. (author). 12 refs., 3 figs., 2 tabs
[en] The method for determining the contributions of asymmetry of illumination and a difference in parameters of p-n and n-p junctions of the p-n-p structure in cadmium-telluride films to the anomalous photovoltage effect is suggested.
[en] This paper proposes a novel miniature dual-functional sensor integrating both pressure and temperature sensitive units on a single chip. The device wafer of SOI is used as a pizeoresistive diaphragm which features excellent consistency in thickness. The conventional anisotropic wet etching has been abandoned, while ICP etching has been employed to etch out the reference cave to minimize the area of individual device in the way that the 57.40 slope has been eliminated. As a result, the average cost of the single chip is reduced. Two PN junctions with constant ratio of the areas of depletion regions have also been integrated on the same chip to serve as a temperature sensor, and each PN junction shows high linearity over -40 to 100 0C and low power consumption. The iron implanting process for PN junction is exactly compatible with the piezoresistor, with no additional expenditure. The pressure sensitivity is 86 mV/MPa, while temperature sensitivity is 1.43 mV/0C, both complying with the design objective.