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[en] Here, we report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated MoS2 field effect transistors, and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-field microwave imaging with small distance modulation.
Journal
Review of Scientific Instruments; ISSN 0034-6748; 
; v. 89(4); vp
; v. 89(4); vp
[en] A new kind of metamaterial composed of metallic split-ring structure arranged in a two-dimensional array is designed, which shows the multipoles' resonances, especially the magnetic toroidal dipolar (MTD) resonance. The calculated scattering power proves that the resonance at 14.416 GHz is mainly excited by MTD response. Compared with the other two resonances excited by normal multipoles, MTD response has the strongest dependence on permittivity of substrate and background material, which has potential applications on permittivity sensor. (paper)
Journal
Physica Scripta (Online); ISSN 1402-4896; ; v. 88(5); [5 p.]
; v. 88(5); [5 p.]
[en] This comment summarizes our present view of the complex problem of the influence of the statistical stretching on the permittivity of dielectric polymers in the rubbery state. (comment)
Journal
Smart Materials and Structures (Print); ISSN 0964-1726; ; v. 22(3); [2 p.]
; v. 22(3); [2 p.]
[en] Highlights: • Nano-Fe3O4/PANI composites have negative permittivity which is significantly affected with the nano-Fe3O4 content. • Improved structure model of “crystal-nano wire” is used to explain the generation mechanism of negative permittivity. • Negative dielectric phenomenon of nano-Fe3O4/PANI composites is explained from the point of structure.
Journal
[en] The dielectric and electrical properties of the TlInS2 crystal implanted with protons (protons with the energy of 150 keV) were investigated both in the tetragonal c axis and in the direction perpendicular to this axis. It is shown that the numerical values of the permittivity and electrical conductivity increase sharply in the direction of the c axis and decrease in the direction perpendicular to this axis. The decrease in the anisotropy in the TlInS2 crystal under the influence of protons is associated with the amorphization of the crystal.
Journal
Journal of Radiation Researches; ISSN 2312-3001; ; v. 7(2); p. 14-18
; v. 7(2); p. 14-18
[en] This paper presents development of a capacitive microsensor to be used in monitoring of wound healing process. Wounds will heal more quickly if they are kept under a bandage and presently bandages must be removed to track the healing process. This could potentially delay the healing process. A sensor can be used to detect the presence of blood in the wound by measuring the capacitance. Blood has a higher permittivity than air or any other substance that may be in the wound and will significantly increase the total measured capacitance in the device. The presence of blood in the wound under the bandage and so in the device would signify that the wound is not fully healed. The sensor was fabricated using standard MEMS (Microelectromechanical Systems) techniques in cleanroom. The sensor was tested in present of no solution, DI water and saline solution, and capacitance was measured to be 1 pF, 35 pF and 53.3 pF, respectively. (paper)
Journal
IOP Conference Series. Materials Science and Engineering (Online); ISSN 1757-899X; ; v. 417(1); [5 p.]
; v. 417(1); [5 p.]
No abstract available
Source
Machulin, V.F. (ed.); Naukova Rada z Problemi 'Fyizika Napyivprovyidnikyiv ta Napyivprovyidnikovyi Pristroyi' pri VFN Natsyional'noyi Akademyiyi Nauk Ukrayini, Kyiv (Ukraine); Myinyisterstvo Osvyiti yi Nauki Ukrayini, Kyiv (Ukraine); Ukrayins'ke Fyizuchne Tovaristvo, Odesa (Ukraine); Yinstitut Fyiziki Napyivprovyidnikyiv yim. V.Je. Lashkaryova NAN Ukrayini, Kyiv (Ukraine); Klasichnij Privatnij Universitet, Zaporizhzhya (Ukraine); Zaporyiz'kij Natsyional'nij Tekhnyichnij Universitet, Zaporyizhzhya (Ukraine); Zaporyiz'kij Natsyional'nij Universitet, Zaporyizhzhya (Ukraine); VAT 'Zavod Napyivprovyidnikyiv', Zaporyizhzhya (Ukraine); Akademyiya Nauk Vishchoyi Shkoli, Kyiv (Ukraine); 231 p; ISBN 978-966-414-058-1; ; 2009; p. 221; USCPS-4: 4. Ukrainian Scientific Conference on Semiconductor Physics. Conference dedicated to the 50 anniversary of the Institute of Semiconductor Physics after V.E. Lashkaryov of NASU foundation; 4. Ukrayins'ka Naukova Konferentsyiya z Fyiziki Napyivprovyidnikyiv (UNKFN-4). Konferentsyiya prisvyachena 50-ryichchyu stvorennya Yinstitutu Fyiziki Napyivprovyidnikyiv yim. V.Je. Lashkaryova NAN Ukrayini; Zaporyizhzhya (Ukraine); 15-19 Sep 2009; Available from Ukrainian INIS Centre
; 2009; p. 221; USCPS-4: 4. Ukrainian Scientific Conference on Semiconductor Physics. Conference dedicated to the 50 anniversary of the Institute of Semiconductor Physics after V.E. Lashkaryov of NASU foundation; 4. Ukrayins'ka Naukova Konferentsyiya z Fyiziki Napyivprovyidnikyiv (UNKFN-4). Konferentsyiya prisvyachena 50-ryichchyu stvorennya Yinstitutu Fyiziki Napyivprovyidnikyiv yim. V.Je. Lashkaryova NAN Ukrayini; Zaporyizhzhya (Ukraine); 15-19 Sep 2009; Available from Ukrainian INIS Centre
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