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Fisher, N.E.
London Univ. (United Kingdom)1990
London Univ. (United Kingdom)1990
AbstractAbstract
No abstract available
Secondary Subject
Source
Aug 1990; 327 p; Available from British Library Document Supply Centre- DSC:DX199274; Thesis (Ph.D.)
Record Type
Miscellaneous
Literature Type
Thesis/Dissertation
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INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The efficient THz generation by optical rectification from an indigenously grown organic DAST crystal using the 140 fs oscillator laser pulses tunable in between 780 and 850 nm, has been reported in this article. The generated THz pulse profile and powers have been measured using the photoconductive (PC) antennas and pyroelectric detector, respectively. The highest THz peak amplitude and power is obtained at 825 nm central wavelength. The theoretically explanation of the enhancement of THz radiation based on the matching of average optical group refractive index and average THz refractive index of the DAST crystal at 825 nm. In addition, the dependence of THz peak amplitude and THz power on laser power have been carried out. The measured quantum conversion efficiency (QCE) of 0.5 and 1.5 THz bands are of the order 3.7 × 10−3, 1.4 × 10−3, respectively. Finally, an attempt has been made to study the effect of polarizations on generated THz signal. (author)
Primary Subject
Record Type
Journal Article
Journal
Indian Journal of Physics (Online); ISSN 0974-9845;
; v. 91(3); p. 319-326

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Leighton, C.
Durham Univ. (United Kingdom)1997
Durham Univ. (United Kingdom)1997
AbstractAbstract
No abstract available
Source
1997; [vp.]; Available from British Library Document Supply Centre- DSC:DXN014417; Thesis (Ph.D.)
Record Type
Miscellaneous
Literature Type
Thesis/Dissertation
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Source
Israel Physical Society, Jerusalem; Bull. Isr. Phys. Soc; v. 25; p. 20; 1979; p. 20; Israel Physical Society 1979 annual meeting; Beer-Sheva, Israel; 1 Apr 1979; ISSN 0374-2687;
; Published in summary form only.

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Miscellaneous
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Conference
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AbstractAbstract
[en] The dependence of current on polarization is studied in the photoemission from the heterostructure of GaAs-(Al Ga)As in an electrostatic uniform external field in case of a slight doping of a p-type GaAs film. The photocurrent emission intensity is estimated as a function of the emitted electron beam polarization. For an electron beam with ρ=0,8 polarization, the emission current density can reach Ie∼10-3 A/cm2. It is shown that there are imposed upper restrictions on the light intensity, and lower restrictions on the acceptor density. 11 refs
Original Title
Otsenka plotnosti toka pri fotoehmissii ehlektronov vysokoj polyarizatsii iz geterostruktury GaAs-(AlGa)As v ehlektrostaticheskom odnorodnom vneshnem pole
Source
1991; 21 p
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Vaitkus, J.; Gaubas, E.; Kazukauskas, V.; Rinkevicius, V.; Storasta, J.; Tomasiunas, R.; Smith, K.M.; O'Shea, V., E-mail: juozas.vaitkus@ff.vu.lt1999
AbstractAbstract
[en] Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high-resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities. (author)
Primary Subject
Source
S0168900299004337; Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: India
Record Type
Journal Article
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002;
; CODEN NIMAER; v. 434(1); p. 61-66

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AbstractAbstract
No abstract available
Original Title
Ehffektivnye solnechnye ehlementy na osnove vysokoomnogo monokristallicheskogo kremniya
Source
3 refs, 1 tab.
Record Type
Journal Article
Journal
Geliotekhnika; ISSN 0130-0997;
; (no.1); p. 10

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
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Kaiser, M.
Karlsruhe Univ. (T.H.) (Germany). Fakultaet fuer Physik1993
Karlsruhe Univ. (T.H.) (Germany). Fakultaet fuer Physik1993
AbstractAbstract
[en] The study's main objective was the production and characterization of rather closely defined solid-state fullerenes as well as the examination of their photoconductivity and luminescence in the presence of low and high excitation densities. The study was so designed as to throw further light on the changes to be observed for photophysical properties, when the excitation densities are high. (orig.)
[de]
Gegenstand dieser Arbeit ist im wesentlichen die Herstellung und Charakterisierung von moeglichst gut definierten Fulleren-Festkoerpern sowie die Untersuchung der Photoleitung und der Lumineszenz bei niedrigen und hohen Anregungsdichten. Ziel ist es, die Veraenderungen der photophysikalischen Eigenschaften bei hohen Anregungsdichten zu verstehen. (orig.)Original Title
Photophysikalische Eigenschaften von Fulleren bei hohen Anregungsdichten
Primary Subject
Source
9 Jul 1993; 109 p; Available from TIB Hannover: H94B470; Diss. (Dr.rer.nat.).
Record Type
Miscellaneous
Literature Type
Thesis/Dissertation
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Pirralho, M J P; Peres, M L; Pena, F S; Fonseca, R S; Da Cruz Alves, D; Soares, D A W; Fornari, C I; Rappl, P H O; Abramof, E, E-mail: marcelos@unifei.edu.br2019
AbstractAbstract
[en] In this work, we present photoconductivity measurements performed on metallic p-type Pb1−xEuxTe epitaxial films for x ∼ 0.02 and x ∼ 0.03 in the temperature range of 77K–300 K. The results show that sample with x ∼ 0.02 presented negative photoconductivity effect in the whole range of temperatures measured, while sample with x ∼ 0.03 presented a transition from positive to negative photoconductivity. Hall measurements were also performed to investigate the effects observed in both samples, but could not give any conclusive explanation. On the other hand, we showed that disorder changes considerably the generation/recombination ratios as temperature is varied giving rise to the anomalous effects observed. (paper)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/2053-1591/aaf2c5; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Materials Research Express (Online); ISSN 2053-1591;
; v. 6(2); [8 p.]

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AbstractAbstract
[en] Electronic conduction in various polymeric insulating material was investigated. Specially photocurrent was observed in low density and 30*m thick polyethylene when the sample was exposed by low-intensity white light from a tungsten lamp. A large photo-current was observed for the pre-irradiated sample by high dosage gamma-ray. Photo-current was measured for many factors, wave length, voltage, temperature. Photo-current is fairly sensitive to photons with a certin range of energy (about 0.83eV), which might support that charge carriers are optically released from trap centers, it has approximately the same activation energy as the dark current. A tentative energy diagram for irradiated polyethylene is proposed on the assumption of band model. It includes two kinds of shallow trap and deep trap which are considered to play an important role in electrical conduction of polymeric insulator. (Author)
Record Type
Journal Article
Journal
Chungnam Journal of Sciences, Chungnam National University; v. 11(1); p. 89-94
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