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AbstractAbstract
[en] This scientific study focuses on the investigation of the cutting forces developed during dry longitudinal turning with TiAlN PVD coated inserts of a CoCrWNi alloy used in medical applications, especially in orthopaedics. The present paper is organised in two main parts: the first part presents the experimental procedure in terms of material, input data, necessary technological means, physical experiments and data registration while the second part presents the results and their subsequent interpretation. The study reveals the variation of the turning cutting forces in relation to the cutting regime parameters. (paper)
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5. International Conference on Advanced Materials, Mechanics and Structural Engineering; Seoul (Korea, Republic of); 19-21 Oct 2018; Available from http://dx.doi.org/10.1088/1757-899X/473/1/012018; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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IOP Conference Series. Materials Science and Engineering (Online); ISSN 1757-899X;
; v. 473(1); [5 p.]

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AbstractAbstract
[en] Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment we discuss two published papers and new experimental results that support a lack of intrinsic switching and point to the conclusion that the thickness dependence of the Langmuir-Blodgett films is due to the influence of the electrode interfaces. (comment)
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S0022-3727(06)09660-4; Available online at http://stacks.iop.org/0022-3727/39/1984/d6_9_N01.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/; Country of input: International Atomic Energy Agency (IAEA)
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Huang, Michael H.; Wu, Yiying; Feick, Henning; Tran, Ngan; Weber, Eicke; Yang, Peidong
Ernest Orlando Lawrence Berkeley National Lab., CA (United States). Funding organisation: USDOE Director, Office of Science (United States)2000
Ernest Orlando Lawrence Berkeley National Lab., CA (United States). Funding organisation: USDOE Director, Office of Science (United States)2000
AbstractAbstract
No abstract available
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LBNL--49620; AC03-76SF00098; Available from Ernest Orlando Lawrence Berkeley National Lab., CA (US); Journal Publication Date: 2001 Jan. 16
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Peng Xilin; Kolbo, Paul; Nikolaev, Konstantin; Chen, Shawn; Wang Zhongyan; Boonstra, Tom; Anderson, Paul; Kalderon, Steven; Czoschke, Peter; Morrone, Augusto; Dimtrov, Dimitar; Xue Song; Chen Yonghua, E-mail: xilin.peng@seagate.com2009
AbstractAbstract
[en] Current-perpendicular-to the plane (CPP) giant magnetoresistive (GMR) sensors with a current-confined-path (CCP) layer inserted within the Cu spacer have been manufactured using ultrahigh vacuum PVD sputtering, photolithography, and ion milling processes. Compared with a pure metallic CPP system, the CCP insertion layer enables a substantial increase in sensor resistance with an equivalent or better GMR ratio, and thus a significant improvement in the ΔRA amplitude. Heads with such a sensor have been tested under various bias currents, both quasistatically and on a spinstand. It was found that the resistance of the sensors increases with increasing bias current and voltage, following typical metallic behavior. Also, the CCP insertion layer enables operation at higher bias currents compared with the pure metallic sensors (without the insertion layer) and thus a higher output signal. This effect is attributed to less magnetic instability due to the reduced Ampere fields around the narrow (∼6 nm) current-confined paths. Finally, the CPP-GMR heads with CCP layer were tested under high-density recording conditions using the perpendicular recording media. Bit error rate (BER) as a function of linear density is reported. Microtrack profiles were also recorded to determine track density capability.
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S0304-8853(08)01263-8; Available from http://dx.doi.org/10.1016/j.jmmm.2008.12.008; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Journal of Magnetism and Magnetic Materials; ISSN 0304-8853;
; CODEN JMMMDC; v. 321(12); p. 1889-1892

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Lupina, Grzegorz; Kitzmann, Julia; Lukosius, Mindaugas; Dabrowski, Jarek; Wolff, Andre; Mehr, Wolfgang, E-mail: lupina@ihp-microelectronics.com
arXiv e-print [ PDF ]2013
arXiv e-print [ PDF ]2013
AbstractAbstract
[en] Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the monolayer graphene regions while the multilayer islands remain uncovered. Experimental insights and ab initio calculations show that variations in the removal efficiency of carbon residuals after the transfer process can be responsible for this behavior. Low-temperature Si seed layer results in improved wetting and enables homogeneous growth. This is an important step towards realization of electronic devices in which graphene is embedded between two Si layers
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(c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] Electrochemical s techniques were used to study the corrosion behaviour of Tin films on commercial Ti and Zircaloy-4 substrates. Using a Nissin RMP3-R3-J equipment lims of 4μ were obtained via PVD. The tests performed at room temperature, in 0.1 MNACl solution, were the following: Potentiodynamic Polarization curves (scan rate= 0.1666 mV/s) Galvanostatic tests ( i=0.8 mA/cm2). The results were compared with the results of the tests applied to bare substrates under the same experimental conditions. In another set of tests the electronic properties of the film layer were determined via anodic and cathodic polarization curves in a solution containing a redox couple ( Na2So4 0,1M+K4[Fe(CN)6]0,05M+K3[Fe(CN)6] 0,05M). The polarization curves showed that- in principle- The layer did not affect the anodic behaviour of both substrates under these experimental corrosion conditions. Nevertheless, for low over potentials, the anodic current density is lower for the material with the protective layer. Besides, the tests performed with the redox couple [Fe(CN)6]-4/[Fe(CN)6]-3 indicated that the conductivity of the Tin film is higher than the surface films present on the Ti an Zry-4 (JCH)
Original Title
Estudio de la corrosion de recubrimientos de TiN sobre sustratos de titanio y zircaloy
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Universidad de la Serena (ULS), La Serena (Chile); Sociedad de Metalurgia y Materiales (SOCHIM) (Chile); Sociedad Argentina de Metalurgia y Materiales (SAM), Buenos Aires (Argentina); 956 p; Nov 2004; p. 953-956; Congress CONAMET/SAM 2004; Congreso CONAMET/SAM 2004; La Serena (Chile); 3-5 Nov 2004; Available from Library of CCHEN
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Singh, Kulwant; Bidaye, A.C.; Suri, A. K.
Proceedings of the international symposium for research scholars on metallurgy, materials science and engineering2010
Proceedings of the international symposium for research scholars on metallurgy, materials science and engineering2010
AbstractAbstract
[en] Reactive magnetron sputtering, a physical vapor deposition (PVD) technique, is used widely for deposition of compound and composite coatings. Ternary compound or multi component compound coatings are increasingly being researched due to their exotic properties. The properties of these coatings depend strongly on the composition of the films. A mathematical model has been developed to predict the composition of the metallic constituents of the coatings deposited by reactive magnetron sputtering using two metals composite target in the presence of a reactive gas (nitrogen) environment. In the model, composition of the metallic constituents of the coating and percentage of covered areas of the target (target poisoning) vis-a-vis partial pressure of nitrogen can be predicted. The model has been experimentally tested on titanium-niobium system. (author)
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Dept. of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai (India); Indian Institute of Metals Chennai Chapter, Chennai (India); 205 p; 2010; p. 47; ISRS-2010: 4. international symposium for research scholars on metallurgy, materials science and engineering; Chennai (India); 20-22 Dec 2010
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Book
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AbstractAbstract
[en] In this study, TiN is coated on copper surface by Arc-PVD (Physical Vapour Deposition) at different thickness, then resistivity of samples is investigated. In metal film coating on metal surface technique, thickness of coating is measurable experimentally by investigating current voltage variation is shown
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Turkish Physics Society (Turkey); 1130 p; 2005; p. 448; World Year of Physics 2005: 23. International Physics Congress of the Turkish Physical Society; 2005 Dunya Fizik Yili Turk Fizik Dernegi 23. Uluslararasi Fizik Kongresi; Mugla (Turkey); 13-16 Sep 2005; Available from Turkish Physics Society (Turkey)
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Saenko, V.
Riecansky (V.E.) Technical Translations, Cambridge (United Kingdom)2001
Riecansky (V.E.) Technical Translations, Cambridge (United Kingdom)2001
AbstractAbstract
[en] The design of a deposition system with a plasma source having a hollow cathode with an insert is given. The source has the advantage of a uniform discharge and evaporation rate
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2001; 9 p; Available from British Library Document Supply Centre- DSC:9023.190(9870)T; Translated from Russian (Problemy Spetsial'noi Elektrometallurgii 2000 (3) p. 44-54)
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Report
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Translation
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Kostylev, A.I.; Dzidziguri, Eh.L.; Sidorova, E.N.
Physicochemistry of ultrafine (nano-) systems. Materials of X All-Russian Conference and Russian youth scientific school2012
Physicochemistry of ultrafine (nano-) systems. Materials of X All-Russian Conference and Russian youth scientific school2012
AbstractAbstract
No abstract available
Original Title
Poluchenie i svojstva nanoporoshka reniya
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Rossijskij Fond Fundamental'nykh Issledovanij, Moscow (Russian Federation); Ministerstvo Obrazovaniya i Nauki Rossijskoj Federatsii, Moscow (Russian Federation); Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Nanotekhnologicheskoe Obshchestvo Rossii, Moscow, Zelenograd (Russian Federation); RNTs Kurchatovskij Inst., Moscow (Russian Federation); Yuzhnyj Federal'nyj Univ., Rostov-na-Donu (Russian Federation); NKTB P'ezopribor YuFU, Rostov-na-Donu (Russian Federation); 138 p; ISBN 978-5-9275-0997-3;
; 2012; p. 134; 10. All-Russian conference and Russian youth scientific school on physicochemistry of ultrafine (nano-) systems; Fizikokhimiya ul'tradispersnykh (nano-) sistem. X Vserossijskaya konferentsiya i Rossijskaya molodezhnaya nauchnaya shkola; Anapa (Russian Federation); 25-29 Sep 2012

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