Filters
Results 1 - 10 of 477
Results 1 - 10 of 477.
Search took: 0.022 seconds
Sort by: date | relevance |
AbstractAbstract
[en] The effect of total dose radiation on power VDMOSFETs of two different patterns has been presented The stripe cell pattern is the more promising pattern in the total dose radiation hardness of power VDMOSFETs than hexagon cell patterns. Institute of Microelectronics of Chinese Academy of Sciences has developed stripe cell power VDMOSFETs of high total dose radiation hardness ability. The products can be immune from 1400 krad(Si). (authors)
Primary Subject
Source
3 figs., 2 tabs., 5 refs.
Record Type
Journal Article
Journal
Nuclear Electronics and Detection Technology; ISSN 0258-0934;
; v. 32(7); p. 769-771

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] We present a single-event-hardened phase-locked loop for frequency generation applications and a digital delay-locked loop for DDR2 memory interface applications. The PLL covers a 12.5 MHz to 500 MHz frequency range with an RMS Jitter (RJ) of 4.70-pS. The DLL operates at 267 MHz and has a phase resolution of 60-pS. Designed in 0.13-μm CMOS technology, the PLL and the DLL are hardened against SEE for charge injection of 250 fC. The PLL and the DLL consume 17 mW and 22 mW of power under a 1.5 V power supply, respectively
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1748-0221/9/01/C01029; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Instrumentation; ISSN 1748-0221;
; v. 9(01); p. C01029

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The typical voltage comparator circuits are considered. Shown that the use of series- parallel connection of cascades improves the accuracy, speed and hardness to single event transient effects. (paper)
Primary Subject
Source
1. international telecommunication conference on advanced micro- and nanoelectronic systems and technologies; Moscow (Russian Federation); 22-23 Dec 2015; Available from http://dx.doi.org/10.1088/1757-899X/151/1/012027; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
IOP Conference Series. Materials Science and Engineering (Online); ISSN 1757-899X;
; v. 151(1); [4 p.]

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Uglov, V.V.; Kvasov, N.T.; Safronov, I.V.; Komarov, N.D.
Interaction of radiation with solids. Proceedings of 12. International conference2017
Interaction of radiation with solids. Proceedings of 12. International conference2017
AbstractAbstract
[en] One of the ways to improve the strength properties, the temperature and radiation resistance of materials is the synthesis of nanocomposite systems, which in the simplest case are a matrix structured by nanoscale particles. The change in physical, mechanical, magnetic, thermophysical and other properties of nanoparticles can be related to deformation of the material due to surface tension, reduction of the coordination number in the near-surface layer, change in its symmetry group, restructuring the architecture of electronic shells, changing binding energy. A significant influence on the physical properties of nanoobjects can also have various structural defects. The dependence of Young's modulus of elasticity on the radius of a nanoparticle was determined in treatise. In order to determine the Young's modulus of elasticity of a nanostructured material, the resulting formula for E(R) must be transformed into a power law E(R)=A(R/RΦ)m. Similar to the Hall-Petch law. Moreover, A and m are defined on the interval 0≤R≤R0 (where R0 is the boundary value of R, when exceeded, the Young's modulus is equal to the value of E0 for the bulk material). (authors)
Original Title
Fiziko-mekhanicheskie svojstva nanostrukturirovannykh materialov i ikh radiatsionnaya stojkost&apos
Primary Subject
Source
Uglov, V.V. (ed.); Baran, L.V.; Azarko, I.I. (Belarusian state univ., Minsk (Belarus)); Belarusian state univ., Minsk (Belarus); Ministry of education of Republic of Belarus, Minsk (Belarus); National academy of sciences of Belarus, Minsk (Belarus); Belarus state found of fundamental researches, Minsk (Belarus); 483 p; ISBN 978-985-553-446-5;
; Sep 2017; p. 184-186; 12. International conference 'Interaction of radiation with solids'; 12. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 19-22 Sep 2017; 5 refs., 2 figs.

Record Type
Miscellaneous
Literature Type
Conference
Report Number
Country of publication
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue
Kushpil, V.; Mikhaylov, V.; Kugler, A.; Kushpil, S.; Ladygin, V.P.; Reznikov, S.G.; Svoboda, O.; Tlustý, P., E-mail: kushpil@ujf.cas.cz, E-mail: skushpil@ujf.cas.cz2017
AbstractAbstract
[en] We present recent results on the investigation of the KETEK, ZECOTEK, HAMAMATSU and SENSL SiPM properties after irradiation by the 6–35 MeV neutrons. The typical neutron fluence was about . The changing of the internal structure of the irradiated SiPMs was studied by the measuring of the C–V and C–f characteristics. We have observed the strong influence of the SiPM manufacturing technology on their radiation hardness. The application of the obtained results to the development of the readout electronics is discussed.
Primary Subject
Source
VCI 2016: 14. Vienna Conference on Instrumentation; Vienna (Austria); 15-19 Feb 2016; S0168900216306647; Available from http://dx.doi.org/10.1016/j.nima.2016.06.101; Copyright (c) 2016 Elsevier B.V. All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002;
; CODEN NIMAER; v. 845; p. 114-117

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Shakhnov, V.A.; Kazakov, V.V.; Verstov, V.A.; Glushko, A.A.; Zinchenko, L.A.; Rezchikova, E.V.; Tsivinskaya, T.A.; Sorokin, B.S., E-mail: shakhnov@mail.ru
Collection of abstracts of X Annual Anniversary Conference of Nanotechnological Society of Russia2019
Collection of abstracts of X Annual Anniversary Conference of Nanotechnological Society of Russia2019
AbstractAbstract
No abstract available
Original Title
Primenenie tekhnologii virtual'noj real'nosti pri izuchenii vliyaniya tyazhelykh zaryazhennykh chastits na kharakteristiki sverkhbol'shikh integral'nykh skhem
Primary Subject
Secondary Subject
Source
Obshcherossijskaya Obshchestvennaya Organizatsiya «Nanotekhnologicheskoe Obshchestvo Rossii», Moscow, Zelenograd (Russian Federation); Fond Infrastrukturnykh i Obrazovatel'nykh Programm, Gruppa ROSNANO, Moscow (Russian Federation); 140 p; ISBN 978-5-9500377-5-7;
; 2019; p. 71-72; 10. Annual Anniversary Conference of Nanotechnological Society of Russia; X ezhegodnaya yubilejnaya konferentsiya Nanotekhnologicheskogo obshchestva Rossii; Moscow (Russian Federation); 26-28 Mar 2019

Record Type
Book
Literature Type
Conference
Country of publication
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The new facility SuperKEKB will be an upgrade of the existing KEKB electron–positron asymmetric collider, with a target luminosity of , about 40 times greater than that of KEKB. The detector will also be upgraded to cope with the higher luminosity, pile-up and occupancy. We report here on the design and development of the new pure CsI calorimeter for the forward region. An intensive R&D is being carried on to study the performance of pure CsI crystals with Avalanche Photodiodes readout. Results about the relative energy resolution of this detector, along with radiation hardness studies of all the components, are presented. A matrix of 16 crystals has been put on an electron beam at the BTF facility in Frascati and results in terms of energy resolution of this prototype are also discussed.
Primary Subject
Source
VCI 2016: 14. Vienna Conference on Instrumentation; Vienna (Austria); 15-19 Feb 2016; S0168900216306180; Available from http://dx.doi.org/10.1016/j.nima.2016.06.074; Copyright (c) 2016 Elsevier B.V. All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002;
; CODEN NIMAER; v. 845; p. 524-527

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Gil, E. Cortina; Soung-Yee, L., E-mail: Eduardo.Cortina@uclouvain.be2015
AbstractAbstract
[en] SOIPiX is a R and D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called 'back-gate' effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1748-0221/10/08/C08018; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Instrumentation; ISSN 1748-0221;
; v. 10(08); p. C08018

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Steckert, J.; Skoczen, A., E-mail: skoczen@agh.edu.pl2017
AbstractAbstract
[en] The Large Hadron Collider (LHC) comprises many superconducting circuits. Most elements of these circuits require active protection. The functionality of the quench detectors was initially implemented as microcontroller based equipment. After the initial stage of the LHC operation with beams the introduction of a new type of quench detector began. This article presents briefly the main ideas and architectures applied to the design and the validation of FPGA-based quench detectors.
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1748-0221/12/04/T04005; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Instrumentation; ISSN 1748-0221;
; v. 12(04); p. T04005

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Bomben, M; Calderini, G; Chauveau, J; Marchiori, G; Bagolini, A; Boscardin, M; Giacomini, G; Zorzi, N; Bosisio, L; Rosa, A La, E-mail: marco.bomben@lpnhe.in2p3.fr2014
AbstractAbstract
[en] In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1748-0221/9/05/C05020; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Instrumentation; ISSN 1748-0221;
; v. 9(05); p. C05020

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
1 | 2 | 3 | Next |