[en] The effect of total dose radiation on power VDMOSFETs of two different patterns has been presented The stripe cell pattern is the more promising pattern in the total dose radiation hardness of power VDMOSFETs than hexagon cell patterns. Institute of Microelectronics of Chinese Academy of Sciences has developed stripe cell power VDMOSFETs of high total dose radiation hardness ability. The products can be immune from 1400 krad(Si). (authors)

[en] We present a single-event-hardened phase-locked loop for frequency generation applications and a digital delay-locked loop for DDR2 memory interface applications. The PLL covers a 12.5 MHz to 500 MHz frequency range with an RMS Jitter (RJ) of 4.70-pS. The DLL operates at 267 MHz and has a phase resolution of 60-pS. Designed in 0.13-μm CMOS technology, the PLL and the DLL are hardened against SEE for charge injection of 250 fC. The PLL and the DLL consume 17 mW and 22 mW of power under a 1.5 V power supply, respectively

[en] The typical voltage comparator circuits are considered. Shown that the use of series- parallel connection of cascades improves the accuracy, speed and hardness to single event transient effects. (paper)

[en] One of the ways to improve the strength properties, the temperature and radiation resistance of materials is the synthesis of nanocomposite systems, which in the simplest case are a matrix structured by nanoscale particles. The change in physical, mechanical, magnetic, thermophysical and other properties of nanoparticles can be related to deformation of the material due to surface tension, reduction of the coordination number in the near-surface layer, change in its symmetry group, restructuring the architecture of electronic shells, changing binding energy. A significant influence on the physical properties of nanoobjects can also have various structural defects. The dependence of Young's modulus of elasticity on the radius of a nanoparticle was determined in treatise. In order to determine the Young's modulus of elasticity of a nanostructured material, the resulting formula for E(R) must be transformed into a power law E(R)=A(R/R_Φ)^m. Similar to the Hall-Petch law. Moreover, A and m are defined on the interval 0≤R≤R₀ (where R₀ is the boundary value of R, when exceeded, the Young's modulus is equal to the value of E₀ for the bulk material). (authors)

[en] We present recent results on the investigation of the KETEK, ZECOTEK, HAMAMATSU and SENSL SiPM properties after irradiation by the 6–35 MeV neutrons. The typical neutron fluence was about ${10}^{12}\mathrm{n}/{\mathrm{cm}}^2$. The changing of the internal structure of the irradiated SiPMs was studied by the measuring of the C–V and C–f characteristics. We have observed the strong influence of the SiPM manufacturing technology on their radiation hardness. The application of the obtained results to the development of the readout electronics is discussed.

[en] The new facility SuperKEKB will be an upgrade of the existing KEKB electron–positron asymmetric collider, with a target luminosity of $8\times {10}^{35}{\mathrm{cm}}^{-2}{\mathrm{s}}^{-1}$, about 40 times greater than that of KEKB. The detector will also be upgraded to cope with the higher luminosity, pile-up and occupancy. We report here on the design and development of the new pure CsI calorimeter for the forward region. An intensive R&D is being carried on to study the performance of pure CsI crystals with Avalanche Photodiodes readout. Results about the relative energy resolution of this detector, along with radiation hardness studies of all the components, are presented. A matrix of 16 crystals has been put on an electron beam at the BTF facility in Frascati and results in terms of energy resolution of this prototype are also discussed.

[en] SOIPiX is a R and D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called 'back-gate' effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented

[en] In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given

[en] The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.

[en] The Large Hadron Collider (LHC) comprises many superconducting circuits. Most elements of these circuits require active protection. The functionality of the quench detectors was initially implemented as microcontroller based equipment. After the initial stage of the LHC operation with beams the introduction of a new type of quench detector began. This article presents briefly the main ideas and architectures applied to the design and the validation of FPGA-based quench detectors.