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Sartori, C.S.; Koropecki, R.R.; Alvarez, F.
Proceedings of the 13. National Meeting on Condensed Matter Physics1990
Proceedings of the 13. National Meeting on Condensed Matter Physics1990
AbstractAbstract
[en] Published in summary form only
Original Title
Fotoluminescencia em carbetos de silicio amorfo hidrogenado
Source
Almeida Fonseca, A.L. de (Brasilia Univ., DF (Brazil)); Koiler, B. (Pontificia Univ. Catolica do Rio de Janeiro, RJ (Brazil)); Brescansin, L.M. (Universidade Estadual de Campinas, SP (Brazil)) (and others); Sociedade Brasileira de Fisica, Rio de Janeiro, RJ (Brazil); 284 p; 1990; p. 219; 13. National Meeting on Condensed Matter Physics; Caxambu, MG (Brazil); 8-12 May 1990; Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil
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Miscellaneous
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Conference
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Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik
Korea Advanced Energy Research Inst., Daeduk (Republic of Korea)1987
Korea Advanced Energy Research Inst., Daeduk (Republic of Korea)1987
AbstractAbstract
[en] Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)
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Source
Dec 1987; 82 p
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Report
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Ma, Ruixin; Lu, Kathy; Erb, Donald, E-mail: klu@vt.edu2018
AbstractAbstract
[en] Highlights: • SiOC microstructure is influenced by the solvent trapped in the precursors. • Solvent influences carbon content and crystallization of SiC during pyrolysis. • Accelerated SiC formation is more prominent at lower pyrolysis temperature. • SiC formation decreases with solvent content at higher pyrolysis temperature.
Primary Subject
Source
S0254058418306345; Available from http://dx.doi.org/10.1016/j.matchemphys.2018.07.043; Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.cn2010
AbstractAbstract
[en] An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)
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Source
Available from http://dx.doi.org/10.1088/1674-4926/31/4/044001; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Journal of Semiconductors; ISSN 1674-4926;
; v. 31(4); [3 p.]

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AbstractAbstract
No abstract available
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Source
Letter to the editor.
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Journal Article
Journal
J. Phys., D (London); v. 8(13); p. L157-L158
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Rumyantsev, S L; Levinshtein, M E; Shur, M S; Saxena, T; Zhang, Q J; Agarwal, A K; Palmour, J W, E-mail: melev@nimis.ioffe.rssi.ru2012
AbstractAbstract
[en] Optical switch-on of a high-voltage (12 kV class) 4H-SiC thyristor to a current I = 100 A is reported. The importance of the dI/dt ramp and the turn-on spread for obtaining the maximum switched-on current Imax is discussed. It is demonstrated that Imax can be substantially raised by using a mixed resistive–inductive load. (paper)
Source
Available from http://dx.doi.org/10.1088/0268-1242/27/1/015012; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Liu, Jianhua; Zhou, Bo; Xu, Lei; Han, Zhaohui; Zhou, Junwen, E-mail: xu_lei@kust.edu.cn, E-mail: xulei_kmust@aliyun.com, E-mail: kmustleixu@126.com2020
AbstractAbstract
[en] In this study, SiC reinforced aluminum (Al) metal matrix composites were prepared by microwave sintering. The effects of SiC content, pressure and sintering temperature on the density, hardness and microstructure of the composites were investigated. It was found that the relative density of SiC/Al composites is 98.43% when the content of SiC is 5 Vol%. When the SiC content is 15 vol%, the sintering temperature is 770 °C and the pressure is 250 MPa, the density and hardness of the composites SiC/Al composites are 96.14% and 130 HV, respectively. And the SiC particles can be uniformly dispersed in the Al matrix by microwave sintering. (paper)
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Source
Available from http://dx.doi.org/10.1088/2053-1591/abc8bf; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Materials Research Express (Online); ISSN 2053-1591;
; v. 7(12); [9 p.]

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AbstractAbstract
[en] Relationship between critical charge density, holding current, and maximum current density has been studied by using an adequate numerical model for the axisymmetric configuration characteristic of the optical triggering of power silicon carbide thyristors. It is shown that the holding current Ih depends only weakly on the critical charge density of a thyristor, pc. At the same time, the maximum current density in the state corresponding to holding current grows very steeply with increasing pc. It is shown that the maximum current density can substantially increase with decreasing current in the axisymmetric configuration if the switched-on state occupies only a part of the total area of a thyristor. (paper)
Source
Available from http://dx.doi.org/10.1088/0268-1242/28/10/105009; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Lin, Jingjing; Guo, Liwei; Jia, Yuping; Huang, Jiao; Guo, Yu; Li, Zhilin; Chen, Xiaolong; Yang, Rong; Wu, Shuang; Zhang, Guangyu, E-mail: lwguo@iphy.ac.cn, E-mail: chenx29@aphy.iphy.ac.cn, E-mail: lwguo@iphy.ac.cn, E-mail: chenx29@aphy.iphy.ac.cn2014
AbstractAbstract
[en] A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (112¯0), and (101¯0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (112¯0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a high carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively
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Source
(c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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External URLExternal URL
Orlowski, B.A.; Pietrzyk, M.A.; Osinniy, V.; Szot, M.; Lusakowska, E.; Grasza, K.; Johnson, R.L.
Funding organisation: Polish Ministry of Science and Higher Education (Poland)2008
Funding organisation: Polish Ministry of Science and Higher Education (Poland)2008
AbstractAbstract
No abstract available
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Secondary Subject
Source
ISSRNS 2008: 9. International School and Symposium on Synchrotron Radiation in Natural Science 2008; Ameliowka (Poland); 15-20 Jun 2008; GRANT N202 101 31/0749 32 AND RESEARCH PROJECT DESY/68/2007; Also available from http://www.synchrotron.org.pl/publ/biulet/vol7.html; 4 refs.
Record Type
Journal Article
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Conference
Journal
Synchrotron Radiation in Natural Science; ISSN 1644-7190;
; v. 7(1-2); p. 131

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