[en] Published in summary form only

[en] Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)

[en] Highlights: • SiOC microstructure is influenced by the solvent trapped in the precursors. • Solvent influences carbon content and crystallization of SiC during pyrolysis. • Accelerated SiC formation is more prominent at lower pyrolysis temperature. • SiC formation decreases with solvent content at higher pyrolysis temperature.

[en] An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

No abstract available

[en] Optical switch-on of a high-voltage (12 kV class) 4H-SiC thyristor to a current I = 100 A is reported. The importance of the dI/dt ramp and the turn-on spread for obtaining the maximum switched-on current I_max is discussed. It is demonstrated that I_max can be substantially raised by using a mixed resistive–inductive load. (paper)

[en] Relationship between critical charge density, holding current, and maximum current density has been studied by using an adequate numerical model for the axisymmetric configuration characteristic of the optical triggering of power silicon carbide thyristors. It is shown that the holding current I_h depends only weakly on the critical charge density of a thyristor, p_c. At the same time, the maximum current density in the state corresponding to holding current grows very steeply with increasing p_c. It is shown that the maximum current density can substantially increase with decreasing current in the axisymmetric configuration if the switched-on state occupies only a part of the total area of a thyristor. (paper)

[en] A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (112^¯0), and (101^¯0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (112^¯0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a high carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively

No abstract available

[en] Electron affinities are calculated in the form of linear functions of the degree of hexagonality by two different methods using the concept of band offsets in heterojunctions formed by 3C-SiC in contact with a non-cubic polytype