[en] It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 10⁹ cm^–3 at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole–Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.

[en] Avalanche photodiodes used in photosensitive devices with internal gain suffer some limitations due to their doping profiles and the reproducibility of their internal gain. Experiments were made on devices using very thin layers of SiO₂. The basic structure being a MOS capacitance, it was shown that such a structure provides an internal gain when minority carriers are injected within the deep depletion layer just beneath the thin oxide in the silicon. Experimal results obtained on devices built using either aluminum and chromium electrodes are presented

[en] We compiled a catalogue of 191 stellar objects showing SiO maser or thermal emission in at least one transition. These are 128 M-Supergiants and Mira variables, 29 IRC- and AFGL-sources, 32 OH/IR stars, the star-forming region Orion KL, and the symbiotic star H1-36. For each transition individual references are given. Special observational set-ups as polarization or VLBI measurements or monitor programs are noted

[en] Published in summary form only

[en] The IRAS source, 19312+1950, exhibits SiO maser emission, which is predominantly detected in evolved stars enshrouded by a cold molecular envelope. In fact, the majority of the observational properties of IRAS 19312+1950 are consistent with the nature of an asymptotic giant branch (AGB) star or post-AGB star. Interestingly, however, some of the observational properties cannot be readily explained within the standard scheme of stellar evolution, and those are rather reminiscent of young stellar objects. In the present research, we considered the evolutionary status of IRAS 19312+1950 as revealed by the very long baseline interferometry and MERLIN observations in SiO, H₂O, and OH maser lines. The double-peaked profile of the 22 GHz H₂O maser line is clearly detected, with the emission regions of its redshifted and blueshifted components separately located, leaving a space of about 10.9 mas between them. The kinematic properties of the H₂O maser emission region appear to be more consistent with a bipolar flow rather than other interpretations such as the Keplerian rotation of a disk. The redshifted component of the SiO maser emission, which exhibits a double-peak profile in previous single-dish observations, is clearly detected in the present interferometry, while the 1612 MHz OH maser line exhibits a complicated line profile consisting of a single strong peak and many weak, high-velocity spikes. The structure of the OH maser emission region is partially resolved, and the kinematic properties of the OH maser emission region are observations reminiscent of a spherically expanding shell, even though the evidence is scant. Collectively, the maser observations described here provide additional support for the evolved star hypothesis for IRAS 19312+1950.

[en] Two methods are proposed to fabricate stacked ruthenium (Ru) nanocrystals (NCs): rapid thermal annealing (RTA) for the whole gate stacks, and RTA before each SiO₂ layer deposition. The size and aerial density of Ru NCs are 2-4 nm and 3 x 10¹² cm^-2 for the former method, compared to 3-7 nm and 2 x10¹² cm^-2 for the latter. Because of the higher surface trap density and more uniform electron tunneling path between upper and lower Ru NCs, a 5.2 V memory window and 1 V after a period of 10 years are observed in metal oxide semiconductor (MOS) capacitors fabricated by the former method, which are much better than 4.6 V and no window remaining after one year observed in the latter. The former method is compatible with conventional CMOS technology.

No abstract available

[en] This paper introduces major characteristics of the single event latchup (SEL) in CMOS devices. We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser. The laser simulation results give the energy threshold for samples to undergo SEL. SEL current pulses are measured for CMOS devices in the latchup state, the sensitive areas in the devices are acquired, the major traits, causing large scale circuits to undergo SEL, are summarized, and the test equivalence between a pulse laser and ions is also analyzed.

No abstract available

[en] This paper reports for the first time on a spectral degradation of photoluminescence from a-SiO_x that occurs due to the storage of the samples in ambient atmosphere. The spectra of samples with an initial emission peak E_PL,ini > 2.16 eV shift to lower energies. The degraded spectra have a common maximum at E_PL,deg ≈ 2.16 eV. In the spectra of samples with E_PL,ini < 2.16 eV, a high-energetic shoulder around E_PL ≈ 2.16 eV develops. The initial photoluminescence spectra result from radiative recombination between tail states. The degraded luminescence is dominated by two effects. On the one hand, band tail luminescence still occurs. On the other hand, the prevalent emission around E_PL,deg ≈ 2.16 eV originates from recombination attributed to Si = O bonds