[en] We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO₂, Si/SiO_xN_y) and insulator/insulator (Si₃N₄/SiO₂) interfaces in the structures underlying the operation of silicon devices. (reviews of topical problems)

No abstract available

[en] Silicon isotope separation from hexafluorodisilane (Si₂F₆) has been examined using CO₂ pulse laser. Si₂F₆ containing specific isotopes was preferentially decomposed to SiF₄ depending on the wavenumber of the laser. ²⁹Si and ³⁰Si were concentrated in the SiF₄ produced at 945-955 cm^-1 while the SiF₄ slightly enriched with ²⁸Si was obtained at 970-980 cm^-1. The SiF₄ containing ³⁰Si and ²⁹Si with an enrichment factor of 14.0 and 2.63, respectively, at maximum was continuously produced with a yield efficiency of 4.4% at 951.203 cm^-1 and 9.6% at 956.205 cm^-1, under the flow rate of 16.7 mm³s^-1 and pressure of 26.6 Pa for the inlet Si₂F₆. These enrichment factors correspond to the isotopic concentrations of 43.3% and 12.3% for ³⁰Si and ²⁹Si, respectively. A higher concentration than 97.6% with an enrichment factor of 1.06 is attained for ²⁸Si in the residual Si₂F₆ after irradiating at 951.203 cm^-1 followed by 956.205 cm^-1. The dependence of silicon isotope enrichment on the wavenumber could be explained by the difference in apparent decomposition rate for the reaction of Si₂F₆+nhν→SiF₄+SiF₂ between six isotopic species such as ²⁸Si²⁸SiF₆, ²⁸Si²⁹SiF₆, ²⁸Si³⁰SiF₆, ²⁹Si²⁹SiF₆, ²⁹Si³⁰SiF₆ and ³⁰Si³⁰SiF₆ in Si₂F₆ from the mass balance analysis of the experimental results. (author)

[en] This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiC_x), silicon nitride (a-SiN_x): silicon oxide (a-SiO_x). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y = C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2 H atoms per Si atom is required to maintain effective luminescence

[en] Key prerequisites for the accelerated development of chemistry of silicones are considered in the context of the significance of organosilicon polymers for sustainable future. The principal trends in this field during the past two decades are analyzed and the quantum leap that occurred in the control of the structures and selective synthesis of macromolecules is pointed out. The problems of research into silicones are defined and the most promising approaches to the solution of these problems aimed at more active involvement of such systems into various areas of practical activity are demonstrated. The bibliography includes 166 references

[en] The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 10¹⁰ W) and repetition rate (to 10⁴ Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 10² A cm^-2 and 10⁸ W in the former case, and 10⁵ A cm^-2 and 10¹⁰ W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined. (reviews of topical problems)

[en] The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of (1 1 0) silicon wafers. SiO₂ nano-ridges of 20 nm in width were fabricated. A silicon rich nitride layer is deposited over the original SiO₂ nano-ridges to improve the ridge strength and to achieve a positive tapered shape which is beneficial for nanoimprinting. A replica of the nano-ridges with silicon rich nitride shield is obtained by imprinting the stamp into thermoplastic nanoimprint polymer mr-I 7010E

[en] Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope ²⁸Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1d and 2s_1/2 neutron states in the isotopes ^{26,28,30,32,34}Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes ^30,32,34Si and the N = 20 neutron shell.

[en] Ultrafine Si, Si₃N₄, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO₂ laser. The mechanism of SiH₄ CO₂ laser induced absorption and dissociation is discussed on the basis of the results of the spectral and time resolved measurement of fragment chemiluminescence. The role played by the SiH₂ radical in the powder formation is investigated. The quality of Si, Si₃N₄, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-Ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concetration is discussed

No abstract available