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AbstractAbstract
[en] We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO2, Si/SiOxNy) and insulator/insulator (Si3N4/SiO2) interfaces in the structures underlying the operation of silicon devices. (reviews of topical problems)
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Available from http://dx.doi.org/10.3367/UFNe.0179.200909a.0921; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Physics Uspekhi; ISSN 1063-7869;
; v. 52(9); p. 869-877

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No abstract available
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Journal Article
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Astrophysical Journal; v. 193(1); p. 265-272
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AbstractAbstract
[en] Silicon isotope separation from hexafluorodisilane (Si2F6) has been examined using CO2 pulse laser. Si2F6 containing specific isotopes was preferentially decomposed to SiF4 depending on the wavenumber of the laser. 29Si and 30Si were concentrated in the SiF4 produced at 945-955 cm-1 while the SiF4 slightly enriched with 28Si was obtained at 970-980 cm-1. The SiF4 containing 30Si and 29Si with an enrichment factor of 14.0 and 2.63, respectively, at maximum was continuously produced with a yield efficiency of 4.4% at 951.203 cm-1 and 9.6% at 956.205 cm-1, under the flow rate of 16.7 mm3s-1 and pressure of 26.6 Pa for the inlet Si2F6. These enrichment factors correspond to the isotopic concentrations of 43.3% and 12.3% for 30Si and 29Si, respectively. A higher concentration than 97.6% with an enrichment factor of 1.06 is attained for 28Si in the residual Si2F6 after irradiating at 951.203 cm-1 followed by 956.205 cm-1. The dependence of silicon isotope enrichment on the wavenumber could be explained by the difference in apparent decomposition rate for the reaction of Si2F6+nhν→SiF4+SiF2 between six isotopic species such as 28Si28SiF6, 28Si29SiF6, 28Si30SiF6, 29Si29SiF6, 29Si30SiF6 and 30Si30SiF6 in Si2F6 from the mass balance analysis of the experimental results. (author)
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[en] This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiCx), silicon nitride (a-SiNx): silicon oxide (a-SiOx). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y = C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2 H atoms per Si atom is required to maintain effective luminescence
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(c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] Key prerequisites for the accelerated development of chemistry of silicones are considered in the context of the significance of organosilicon polymers for sustainable future. The principal trends in this field during the past two decades are analyzed and the quantum leap that occurred in the control of the structures and selective synthesis of macromolecules is pointed out. The problems of research into silicones are defined and the most promising approaches to the solution of these problems aimed at more active involvement of such systems into various areas of practical activity are demonstrated. The bibliography includes 166 references
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Source
Available from http://dx.doi.org/10.1070/RC2013v082n07ABEH004406; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Russian Chemical Reviews (Print); ISSN 0036-021X;
; v. 82(7); p. 635-647

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[en] The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 1010 W) and repetition rate (to 104 Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 102 A cm-2 and 108 W in the former case, and 105 A cm-2 and 1010 W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined. (reviews of topical problems)
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Source
Available from http://dx.doi.org/10.1070/PU2005v048n07ABEH002471; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Physics Uspekhi; ISSN 1063-7869;
; v. 48(7); p. 703-712

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AbstractAbstract
[en] The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of (1 1 0) silicon wafers. SiO2 nano-ridges of 20 nm in width were fabricated. A silicon rich nitride layer is deposited over the original SiO2 nano-ridges to improve the ridge strength and to achieve a positive tapered shape which is beneficial for nanoimprinting. A replica of the nano-ridges with silicon rich nitride shield is obtained by imprinting the stamp into thermoplastic nanoimprint polymer mr-I 7010E
Source
MME 07: European workshop on micromechanics; Guimaraes (Portugal); 16-18 Sep 2007; S0960-1317(08)67371-4; Available from http://dx.doi.org/10.1088/0960-1317/18/6/064013; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Conference
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Journal of Micromechanics and Microengineering. Structures, Devices and Systems; ISSN 0960-1317;
; CODEN JMMIEZ; v. 18(6); [6 p.]

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AbstractAbstract
[en] Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope 28Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1d and 2s1/2 neutron states in the isotopes 26,28,30,32,34Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes 30,32,34Si and the N = 20 neutron shell.
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Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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BARYONS, BETA DECAY RADIOISOTOPES, BETA-MINUS DECAY RADIOISOTOPES, BETA-PLUS DECAY RADIOISOTOPES, ELEMENTARY PARTICLES, EVEN-EVEN NUCLEI, FERMIONS, HADRONS, ISOTOPES, LIGHT NUCLEI, MATHEMATICAL MODELS, NUCLEI, NUCLEONS, RADIOISOTOPES, SECONDS LIVING RADIOISOTOPES, SILICON ISOTOPES, STABLE ISOTOPES, YEARS LIVING RADIOISOTOPES
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Borsella, E.; Cneve, L.; Fantoni, R.; Piccirillo, S.
Contributions to the 1st Int. Conference on new laser technologies and applications1988
Contributions to the 1st Int. Conference on new laser technologies and applications1988
AbstractAbstract
[en] Ultrafine Si, Si3N4, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO2 laser. The mechanism of SiH4 CO2 laser induced absorption and dissociation is discussed on the basis of the results of the spectral and time resolved measurement of fragment chemiluminescence. The role played by the SiH2 radical in the powder formation is investigated. The quality of Si, Si3N4, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-Ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concetration is discussed
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ENEA, Rome (Italy); 103 p; 1988; p. 23-29; 1. Conference on new laser technologies and applications; Olympia, KY (USA); 19-23 Jun 1988
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Report
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Ushakov, A.A.; Sovach, V.P., E-mail: ushakovaa2015@sibmail.com
Isotopes: technologies, materials and application. II International scientific conference of young scientists, post-graduate students and students. Book of abstracts2015
Isotopes: technologies, materials and application. II International scientific conference of young scientists, post-graduate students and students. Book of abstracts2015
AbstractAbstract
No abstract available
Original Title
Poluchenie vysokoobogashchennogo izotopa kremnij-28 v kaskade gazovykh tsentrifug dlya mezhdunarodnogo proekta “Kilogramm-2”
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Source
Ministerstvo Obrazovaniya i Nauki Rossijskoj Federatsii, Moscow (Russian Federation); Federal'noe Gosudarstvennoe Avtonomnoe Obrazovatel'noe Uchrezhdenie Vysshego Obrazovaniya Natsional'nyj Issledovatel'skij Tomskij Politekhnicheskij Univ., Tomsk (Russian Federation); 68 p; 2015; p. 15; 2. international scientific conference of young scientists, post-graduate students and students on isotopes: technologies, materials and application; Izotopy: tekhnologii, materialy i primenenie. II Mezhdunarodnaya nauchnaya konferentsiya molodykh uchenykh, aspirantov i studentov; Tomsk (Russian Federation); 19-23 Oct 2015
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