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(c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
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Espinola, A.; Dutra, A.J.B.
Sao Paulo Univ., SP (Brazil). Inst. de Quimica1988
Sao Paulo Univ., SP (Brazil). Inst. de Quimica1988
AbstractAbstract
[en] Taking into consideration the importance of the anodic effect in the technological process of tantalum elctrowinning, the authors studies the influence of Ta2O5 and K2TaF7 on the critical anodic current density. The Ta2O5 has a beneficial effect, increasing this current density. K2TaF7 acts indirectly, by increasing the Ta2O5 solubility in the electrolyte. These effects are evident in the current-voltage curves obtained for different K2TaF7 and Ta2O5 concentrations. (author)
[pt]
Determina-se a influencia dos teores do oxido de tantalo, Ta2O5 e do heptafluotantalato dipotassio, K2TaF7 na densidade de corrente anodica cutica durante a eletrorrecuperacao de tantalo a 7000C, utilizando uma mistura eutetica de fluoretos de litio, sodio e potassio como solvente para o K2TaF7 e eventualmente Ta2O5. (autor)Original Title
Influencia da concentracao do Ta2O5 na eletrorrecuperacao de tantalo em fluoretos fundidos
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1988; 9 p; 6. Brazilian Symposium on Electrochemistry and Electroanalytics; Sao Paulo, SP (Brazil); 28-30 Mar 1988
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[en] Studies of the L-Ta2O5 defect structure are reviewed. It is shown that the overall results are inconsistent with a simple oxygen-vacancy defect model. A new defect model based on infinitely adaptive structures is proposed, and according to this model a monophasic structure is maintained without site conservation in the sub-lattices. For L-Ta2O5-type structures it is proposed that the oxygen sub-lattice may change its density of sites independent of the metal sub-lattice. These processes may involve extremely long equilibration periods, even at temperatures as high as 14000C. 27 refs.; 3 figs
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[en] Peroxo-tantalic acid solution was obtained by direct reaction of Ta(OC2H5) with H2O2. It turned into amorphous Ta2O5.nH2O when dried. Thermal analysis revealed that Ta2O5.nH2O thus formed underwent three-step thermal decomposition. Final product up to 700degC was hexagonal tantalum oxide. Electrical conductivity of spin-coated Ta2O5.nH2O was measured with ac impedance method revealing that temperature and humidity dependence of ionic conductivity (4.3x10-7S cm-1 at 27degC) was very small. (author). 10 refs.; 3 figs
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7. International conference on solid state ionics; Hakone/Tsukuba (Japan); 5-11 Nov 1989
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Wagner, Torsten; Molina, Roberto; Yoshinobu, Tatsuo; Kloock, Joachim P.; Biselli, Manfred; Canzoneri, Michelangelo; Schnitzler, Thomas; Schoening, Michael J., E-mail: m.j.schoening@fz-juelich.de2007
AbstractAbstract
[en] The light-addressable potentiometric sensor is a promising technology platform for multi-sensor applications and lab-on-chip devices. However, many prior LAPS developments suffer from their lack in terms of non-portability, insufficient robustness, complicate handling, etc. Hence, portable and robust LAPS-based measurement devices have been investigated by the authors recently. In this work, a 'chip card'-based light-addressable potentiometric sensor system is presented. The utilisation of ordinary 'chip cards' allows an easy handling of different sensor chips for a wide range of possible applications. The integration of the electronic and the mechanical set-up into a single reader unit results in a compact design with the benefits of portability and low required space. In addition, the presented work includes a new multi-frequency measurement procedure, based on an FFT algorithm, which enables the simultaneous real-time measurement of up to 16 sensor spots. The comparison between the former batch-LAPS and the new FFT-based LAPS set-up will be presented. The immobilisation of biological cells (CHO: Chinese hamster ovary) demonstrates the possibility to record their metabolic activity with 16 measurement spots on the same chip. Furthermore, a Cd2+-selective chalcogenide-glass layer together with a pH-sensitive Ta2O5 layer validates the use of the LAPS for chemical multi-sensor applications
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ECS'06: 5. international conference on electrocatalysis from theory to industrial applications; Kotor (Montenegro); 10-14 Sep 2006; S0013-4686(07)00467-7; Available from http://dx.doi.org/10.1016/j.electacta.2007.04.006; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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[en] Only corner-sharing between the seven TaO6 octahedra is observed in the neutral complex [H-11Ta7O12(tdci)6] (tdci 1,3,5-trideoxy-1,3,5-tris(dimethylamino)-cis-inositol). The structure depicts the Ta7O30 double adamantane core. In contrast to previously described structures of polyoxometalate ions, which have a predominantly edge-shared framework, this compound has an unusually open structure. (orig.)
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Angewandte Chemie. International Edition in English; ISSN 0570-0833;
; CODEN ACIEAY; v. 36(18); p. 1964-1966

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Pershin, Y V; Slipko, V A, E-mail: pershin@physics.sc.edu, E-mail: vslipko@uni.opole.pl2019
AbstractAbstract
[en] This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs. (paper)
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Available from http://dx.doi.org/10.1088/1361-6463/ab4537; Country of input: International Atomic Energy Agency (IAEA)
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Hur, Ji-Hyun; Kim, Kyung Min; Chang, Man; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Lee, Myoung-Jae; Kim, Young-Bae; Kim, Chang-Jung; Chung, U-In, E-mail: jhhur@samsung.com, E-mail: yb305.kim@samsung.com2012
AbstractAbstract
[en] We report a physical model for multilevel switching in oxide-based bipolar resistive memory (ReRAM). To confirm the validity of the model, we conduct experiments with tantalum-oxide-based ReRAM of which multi-resistance levels are obtained by reset voltage modifications. It is also noticeable that, in addition to multilevel switching capability, the ReRAM exhibits extremely different switching timescales, i.e. of the order of 10−7 s to 100 s, with regard to reset voltages of only a few volts difference which can be well explained by our model. It is demonstrated that with this simple model, multilevel switching behavior in oxide bipolar ReRAM can be described not only qualitatively but also quantitatively. (paper)
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Available from http://dx.doi.org/10.1088/0957-4484/23/22/225702; Country of input: International Atomic Energy Agency (IAEA)
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Nanotechnology (Print); ISSN 0957-4484;
; v. 23(22); [5 p.]

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[en] Atomic layer deposition of highly conformal films of tantalum oxide were studied using tantalum alkylamide precursors and water as the oxygen source. These films also exhibited a very high degree of conformality: 100% step coverage on vias with aspect ratios greater than 35. As deposited, the films were free of detectable impurities with the expected (2.5-1) oxygen to metal ratio and were smooth and amorphous. The films were completely uniform in thickness and composition over the length of the reactor used for depositions. Films were deposited at substrate temperatures from 50 to 350 deg. C from precursors that were vaporized at temperatures from 50 to 120 deg. C. As deposited, the films showed a dielectric constant of 28 and breakdown field consistently greater than 4.5 MV/cm
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S0040609003005029; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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[en] Tantalum pentoxide films grown anodically on tantalum foil have been used as reference materials for a variety of purposes. For both the calibration of depth resolution in sputter-depth profiling instruments using Auger electron spectroscopy, and for calibrating the sputtering rate in these instruments, the certified reference material BCR 261 has been developed at NPL. Tantalum pentoxide reference materials have also been developed in Paris and at Chalk River with considerable characterization. Here we bring these separate standards to one common absolute calibration, show all to be of identical composition, and show that the sputtering rate is constant with depth. This establishes the NPL/BCR material for determining sputtering flux densities, and hence for calibrating Faraday cups, and also for calibrating nuclear scattering instruments for absolute measurements
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Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; ISSN 0734-2101;
; CODEN JVTAD; v. 5(4); p. 1988-1993

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