No abstract available

[en] Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

No abstract available

[en] To obtain insights into the roles of carbon and nitrogen contained in the starting materials in partially oxidized tantalum carbonitride (TaC_xN_y) oxygen-reduction electrocatalysts, we studied oxygen-reduction-reaction (ORR) behaviors and structural properties of tantalum-oxide-based catalysts prepared by partial oxidation of tantalum carbides (TaC) and nitrides (TaN) under low oxygen pressure with 2%H₂/N₂ based gas at 1000 °C. The surface tantalum-oxide phase obtained from TaC were β-Ta₂O₅ in whole degree of oxidation (DOO) range, while the both TaON and Ta₂O₅ were formed in the surface phases obtained by the oxidation of TaN, especially at low DOO regions. The highest ORR response was obtained for β-Ta₂O₅ containing partially oxidized TaC (Ta-COs). Although, the local structure of surface oxide phase of β-Ta₂O₅ containing partially oxidized TaN (Ta-NOs) are almost identical, Ta-NOs showed no significant ORR responses. Carbon contained in the starting materials, therefore, plays an indispensable role in emergence of ORR activity.

[en] Data on phase composition of products formed under electric explosion of tantaum hydride and carbon mixtures in water are presented. Cubic tantalum carbide TaCsub(x), hexagonal tantalum oxycarbide as well as tantalum, graphite and oxide phases are stated to take place in products of electric explosion of tantalum hydride and graphite mixtures in water. Content of these phases is determined by composition of the initial mixture and size of produced particles

[en] A highly selective-greater than 100 to 1-etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching

[en] After a historical review of the use of tantalum and other special metals in hard metals, examples are given of Ta-containing hard metals (historical development up to the present), and the worldwide consumption of Tal from 1930 to 1980 and the infrastructure of the tantalum market during the same period are dealt with. The use of tantalum in special alloys (tantalum base alloys, Ni- or Co-base heavy duty alloys, and tantalum master alloys) is described. (IHOE)

No abstract available

[en] This bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include the types of technique used, and electrical, magnetic, and dielectric properties. Studies of tantalum compounds including nitrates, oxides, and aluminides are presented. The structural properties of sputtered films are also discussed. (This updated bibliography contains 98 citations, 12 of which are new entries to the previous edition.)

[en] Packed bed carburization of a tantalum or tantalum alloy object is disclosed. A method for producing corrosion-resistant tantalum or tantalum alloy objects is described. The method includes the steps of placing the object in contact with a carburizing pack, heating the packed object in vacuum furnace to a temperature whereby carbon from the pack diffuses into the object forming grains with tantalum carbide along the grain boundaries, and etching the surface of the carburized object. This latter step removes tantalum carbides from the surface of the carburized tantalum object while leaving the tantalum carbide along the grain boundaries. 4 figs