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AbstractAbstract
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Journal Article
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Atomic Energy Review; (Spec. issue 3); p. 67-129
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CRYSTAL LATTICES, DENSITY, INTERMETALLIC COMPOUNDS, LATTICE PARAMETERS, PHOSPHIDES, REVIEWS, SELENIDES, SILICIDES, TABLES, TANTALUM BASE ALLOYS, TANTALUM BORIDES, TANTALUM BROMIDES, TANTALUM CARBIDES, TANTALUM CHLORIDES, TANTALUM FLUORIDES, TANTALUM HYDRIDES, TANTALUM IODIDES, TANTALUM NITRIDES, TANTALUM OXIDES, TANTALUM SULFIDES, TELLURIDES
ALLOYS, BORIDES, BROMIDES, CARBIDES, CHALCOGENIDES, CHLORIDES, CRYSTAL STRUCTURE, DOCUMENT TYPES, FLUORIDES, HALIDES, HYDRIDES, INFORMATION, IODIDES, NITRIDES, OXIDES, PHOSPHORUS COMPOUNDS, PHYSICAL PROPERTIES, SILICON COMPOUNDS, SULFIDES, TANTALUM ALLOYS, TANTALUM COMPOUNDS, TRANSITION ELEMENT COMPOUNDS
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Trkula, M.
Los Alamos National Lab., NM (United States). Funding organisation: USDOE, Washington, DC (United States)1996
Los Alamos National Lab., NM (United States). Funding organisation: USDOE, Washington, DC (United States)1996
AbstractAbstract
[en] Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition
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1996; 12 p; Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS); Anaheim, CA (United States); 4-8 Feb 1996; CONF-960202--13; CONTRACT W-7405-ENG-36; Also available from OSTI as DE96008159; NTIS; US Govt. Printing Office Dep
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AbstractAbstract
No abstract available
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Journal Article
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Atomic Energy Review; (Spec. issue 3); p. 41-66
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AbstractAbstract
[en] To obtain insights into the roles of carbon and nitrogen contained in the starting materials in partially oxidized tantalum carbonitride (TaCxNy) oxygen-reduction electrocatalysts, we studied oxygen-reduction-reaction (ORR) behaviors and structural properties of tantalum-oxide-based catalysts prepared by partial oxidation of tantalum carbides (TaC) and nitrides (TaN) under low oxygen pressure with 2%H2/N2 based gas at 1000 °C. The surface tantalum-oxide phase obtained from TaC were β-Ta2O5 in whole degree of oxidation (DOO) range, while the both TaON and Ta2O5 were formed in the surface phases obtained by the oxidation of TaN, especially at low DOO regions. The highest ORR response was obtained for β-Ta2O5 containing partially oxidized TaC (Ta-COs). Although, the local structure of surface oxide phase of β-Ta2O5 containing partially oxidized TaN (Ta-NOs) are almost identical, Ta-NOs showed no significant ORR responses. Carbon contained in the starting materials, therefore, plays an indispensable role in emergence of ORR activity.
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S0013-4686(12)00262-9; Available from http://dx.doi.org/10.1016/j.electacta.2012.02.059; Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] Data on phase composition of products formed under electric explosion of tantaum hydride and carbon mixtures in water are presented. Cubic tantalum carbide TaCsub(x), hexagonal tantalum oxycarbide as well as tantalum, graphite and oxide phases are stated to take place in products of electric explosion of tantalum hydride and graphite mixtures in water. Content of these phases is determined by composition of the initial mixture and size of produced particles
Original Title
Fazovyj sostav produktov pri ehlektricheskom vzryve smesej gidrida tantala i ugleroda
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Source
For English translation see the journal Inorganic Materials (USA).
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AbstractAbstract
[en] A highly selective-greater than 100 to 1-etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching
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12 Feb 1985; v p; US PATENT DOCUMENT 4,498,953/A/; U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50; PAT-APPL-517754.
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Patent
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AbstractAbstract
[en] After a historical review of the use of tantalum and other special metals in hard metals, examples are given of Ta-containing hard metals (historical development up to the present), and the worldwide consumption of Tal from 1930 to 1980 and the infrastructure of the tantalum market during the same period are dealt with. The use of tantalum in special alloys (tantalum base alloys, Ni- or Co-base heavy duty alloys, and tantalum master alloys) is described. (IHOE)
[de]
Nach einem historischen Rueckblick auf den Einsatz von Tantal und anderen Sondermetallen in Hartmetallen werden Beispiele fuer Ta-haltige Hartmetallsysteme (geschichtliche Entwicklung bis Gegenwart), Weltverbrauch im Tal von 1930-1980 und Infrastruktur des Tantalmarkts im gleichen Zeitraum behandelt. Dabei wird auch die Verwendung von Tantal in Sonderlegierungen (Tantalbasislegierungen, Superlegierungen auf Ni- oder Co-Basis und Tantalvorlegierungen) beschrieben. (IHOE)Original Title
Tantal in Hartmetallen und Sonderlegierungen
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Journal Article
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Metall; v. 32(12); p. 1269-1273
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AbstractAbstract
No abstract available
Original Title
Vydelenie radioaktivnykh izotopov tantala bez nositelya iz obluchennogo protonami gafniya
Source
For English translation see the journal Sov. Radiochem.
Record Type
Journal Article
Journal
Radiokhimiya; v. 17(1); p. 140-142
Country of publication
BARYONS, BETA DECAY RADIOISOTOPES, BETA-PLUS DECAY RADIOISOTOPES, CATIONS, CHARGED PARTICLES, DAYS LIVING RADIOISOTOPES, ELECTRON CAPTURE RADIOISOTOPES, ELEMENTARY PARTICLES, FERMIONS, HADRONS, HOURS LIVING RADIOISOTOPES, HYDROGEN IONS, HYDROGEN IONS 1 PLUS, INTERMEDIATE MASS NUCLEI, IONS, ISOTOPES, MINUTES LIVING RADIOISOTOPES, NUCLEI, NUCLEONS, ODD-EVEN NUCLEI, ODD-ODD NUCLEI, RADIOISOTOPES, SEPARATION PROCESSES, TANTALUM ISOTOPES, TRANSITION ELEMENT COMPOUNDS
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AbstractAbstract
[en] This bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include the types of technique used, and electrical, magnetic, and dielectric properties. Studies of tantalum compounds including nitrates, oxides, and aluminides are presented. The structural properties of sputtered films are also discussed. (This updated bibliography contains 98 citations, 12 of which are new entries to the previous edition.)
Source
Mar 1988; 56 p; Available from NTIS PC N01/MF N01; Supersedes PB--86-865342.
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Lopez, P.C.; Rodriguez, P.J.; Pereyra, R.A.
Univ. of California, Los Alamos, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1999
Univ. of California, Los Alamos, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1999
AbstractAbstract
[en] Packed bed carburization of a tantalum or tantalum alloy object is disclosed. A method for producing corrosion-resistant tantalum or tantalum alloy objects is described. The method includes the steps of placing the object in contact with a carburizing pack, heating the packed object in vacuum furnace to a temperature whereby carbon from the pack diffuses into the object forming grains with tantalum carbide along the grain boundaries, and etching the surface of the carburized object. This latter step removes tantalum carbides from the surface of the carburized tantalum object while leaving the tantalum carbide along the grain boundaries. 4 figs
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29 Jun 1999; 20 Apr 1998; [10 p.]; US PATENT DOCUMENT 5,916,377/A/; US PATENT APPLICATION 9-063,327; Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (United States); Application date: 20 Apr 1998
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Patent
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