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AbstractAbstract
[en] Tests on Liquid Penetrant products normally utilized in the temperature range 10 .deg. C to 40 .deg. C have shown that the required sensibility can not be obtained at temperatures lower than 10 .deg. C with the penetration and development time usually specified in the operating procedures. It is thus confirmed that 10 .deg. C is the lowest allowable temperature for use of these products. The results obtained with a penetrant and develop. Specially formulated for low temperatures (SHERWIN B 305+D100) are satisfactory between 0 .deg. C and 15 .deg. C
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Source
9 figs
Record Type
Journal Article
Journal
Journal of the Korean Society for Nondestructive Testing; ISSN 1225-7842;
; v. 3(1); p. 26-30

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Cohen, D.; Polturak, E.; Koren, G.; Aharoni, E.; David, O.
Second international Israeli conference on High Tc Superconductivity1993
Second international Israeli conference on High Tc Superconductivity1993
AbstractAbstract
[en] Short communication
Primary Subject
Source
Ministry of Science and Technology, Jerusalem (Israel); 221 p; Jan 1993; p. 40; 2. international Israeli conference on High Tc Superconductivity; Eilat (Israel); 4-7 Jan 1993
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Miscellaneous
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Conference
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AbstractAbstract
[en] We investigate the emergence of the continuum elastic limit from the atomistic description of matter at zero temperature considering how locally defined elastic quantities depend on the coarse graining length scale. Results obtained numerically investigating different model systems are rationalized in a unifying picture according to which the continuum elastic limit emerges through a process determined by two system properties, the degree of disorder, and a length scale associated to the transverse low-frequency vibrational modes. The degree of disorder controls the emergence of long-range local shear stress and shear strain correlations, while the length scale influences the amplitude of the fluctuations of the local elastic constants close to the jamming transition.
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(c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Numerical Data
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AbstractAbstract
[en] The objective of this work was to study, under field conditions, the effect of temperature on radiation use efficiency (RUE) of maize. Field evidence of the negative effect of low temperature on this variable is lacking. Experiments with different sowing dates and five years of experimentation with October plantings provided a range of average temperatures during the vegetative period from 15.8 to 20.9°C. Delaying the sowing time from September to November produced a highly significant increase in RUE. There was a positive association between RUE and mean temperature from emergence to flowering. Efficiencies varied from 2.27 to 3.17 g of dry matter per MJ of intercepted photosynthetically active radiation for October plantings of five different years. With these data, a positive and significant association between RUE and mean temperature during the November–December vegetative period was found. Across years and planting dates, RUE and mean temperature during the vegetative period were closely correlated (r = 0.87). The regression equation was RUE = −1.8 + 0.07 T. Based on this evidence, it was concluded that low temperatures reduce RUE in maize. (author)
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Secondary Subject
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FAO/AGRIS record; ARN: NL9301116; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Field Crops Research; ISSN 0378-4290;
; v. 32; p. 17-25

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AbstractAbstract
[en] Highlights: • The Al0.5CoCrFeMnNi HEA annealed at 1200 °C was successfully cold-rolled. • The alloys annealed at low temperatures were cracked during cold-rolling. • AlNi-rich B2 phases were formed at lower annealing temperatures than 1200 °C. • The formation of AlNi-rich B2 phases hardened the alloy. • The method to prevent cracking during the cold-rolling of the alloy was proposed.
Primary Subject
Source
S0254058417304856; Available from http://dx.doi.org/10.1016/j.matchemphys.2017.06.043; Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Guénolé, J; Godet, J; Pizzagalli, L, E-mail: Laurent.Pizzagalli@univ-poitiers.fr2010
AbstractAbstract
[en] The non-dissociated screw dislocation in a model covalent material like silicon is known to exist in three possible stable core configurations. We performed calculations combining the nudged elastic band technique and a semi-empirical description in order to determine mechanisms and activation parameters for transforming one core into another. Our results showed that a glide core is necessarily reconstructed, since the energy barrier for reconstruction is easily overcome by thermal activation. Conversely, a transformation between a shuffle and a glide core appears unlikely at low temperature, which raises questions about the existence of the double-period glide configuration
Primary Subject
Source
S0965-0393(10)47496-3; Available from http://dx.doi.org/10.1088/0965-0393/18/6/065001; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Modelling and Simulation in Materials Science and Engineering; ISSN 0965-0393;
; v. 18(6); [11 p.]

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Zhan Xiaogui; Si Liugang; Yang Xiaoxue; Zheng Anshou, E-mail: zhanxiaogui@gmail.com2013
AbstractAbstract
[en] We theoretically investigate the slow light in a quadratically coupled optomechanical system. Different from the linear coupling case, the slow light via quadratic coupling derives from a two-phonon process, and the fluctuation in displacement plays a vital role in nonlinear coherence. The numerical results show that the slow light can be realized in an extensive range of parameters even at high temperature, e.g., 200 K. We also find that the environment temperature which provides almost all of the phonon energy, together with the coupling field power, jointly drive the realization of slow light.
Primary Subject
Source
Available from http://dx.doi.org/10.1088/0953-4075/46/2/025501; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Physics. B, Atomic, Molecular and Optical Physics; ISSN 0953-4075;
; CODEN JPAPEH; v. 46(2); [6 p.]

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Zhou, Heyuan; Zhao, Yun; Shen, Xiaofeng; Ni, Zhonghai, E-mail: zhaoyun@cumt.edu.cn, E-mail: nizhonghai@cumt.edu.cn2018
AbstractAbstract
[en] Highlights: • A water-soluble poly(3,4-ethylenedioxythiophene)sulfonate (PEDOT-S) was synthesized by the enzymatic-catalyzed method. • It was carried out under low temperature, without organic solvent and polyelectrolyte. • The absorption spectrum of PEDOT-S changing immediately on varying the pH shows that the self-acid-doping occurred.
Primary Subject
Source
S0254058418300221; Available from http://dx.doi.org/10.1016/j.matchemphys.2018.01.022; Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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AbstractAbstract
[en] Abstract only
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Source
Armbruster, P. (Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)); Barber, R.C. (Winnipeg Univ., MB (Canada). Dept. of Physics); Cohen, E.R. (Rockwell International Corp., Thousand Oaks, CA (United States). Science Center); Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France); Winnipeg Univ., MB (Canada). Dept. of Physics; Rockwell International Corp., Thousand Oaks, CA (United States). Science Center; 129 p; 1990; (ptL) p. 31; 8. International conference on atomic masses and fundamental constants (AMCO-8); Jerusalem (Israel); 9-14 Sep 1990
Record Type
Miscellaneous
Literature Type
Conference
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Jia Kan; Sun Weifeng; Shi Longxing, E-mail: jiakan.01@gmail.com2011
AbstractAbstract
[en] A sub-circuit SPICE model of a MOSFET for low temperature operation is presented. Two resistors are introduced for the freeze-out effect, and the explicit behavioral models are developed for them. The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures. (semiconductor devices)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1674-4926/32/6/064002; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Semiconductors; ISSN 1674-4926;
; v. 32(6); [6 p.]

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