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Rabah, K.V.O.
International Centre for Theoretical Physics, Trieste (Italy)1995
International Centre for Theoretical Physics, Trieste (Italy)1995
AbstractAbstract
[en] Threshold switching between two impedance states have been observed at room temperature in a polymethylmethacrylate (PMMA) thin film sandwiched between two evaporated Al-metal electrodes. The cell's I-V characteristics were found to exhibit memory property. (author). 19 refs, 4 figs
Source
May 1995; 10 p
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Vilan, Ayelet, E-mail: ayelet.vilan@weizmann.ac.il
Proceedings of the seventeenth international conference on thin films: abstracts2017
Proceedings of the seventeenth international conference on thin films: abstracts2017
AbstractAbstract
[en] In contrast to conventional electronics which is based on homo-interfaces (i.e., doping-induced p-n junctions), devices based on advanced electronic materials consist of several thin films of variety of materials (small molecules, polymers, 2D materials, conductive oxides). Chemistry and electronics is intimately connected at interfaces, because the barrier for transport is extremely sensitive to polarization of contacting atoms or existence of interface-specific chemical species acting as electrical traps. My talk will introduce the operation mechanism of the interface-dipole effect and passivation of interface states based on studies of model junctions composed of silicon molecular monolayer / mercury drop. I will specifically focus on ∼ 1 nm long, styrene-like molecules adsorbed onto oxide-free silicon and contacted from top by mercury. A single-atom modification can alter these junctions from accumulation to inversion or from Ohmic transport to 8 orders of magnitude rectification. The electronic fate of a chemical modification strongly depends on its exact position. Chemically “soft” or polarizable groups at either end of the molecule will hybridize with the electronic states of the nearest solid, and therefore will fail to develop a significant dipole. This understanding combined with the richness of chemical synthesis offers an effective and versatile prospect for controlling the electronic properties of hetero-interfaces in general. (author)
Source
CSIR-National Physical Laboratory, New Delhi (India); Indian Vacuum Society, Mumbai (India); 236 p; 2017; p. 41; ICTF-2017: 17. international conference on thin films; New Delhi (India); 13-17 Nov 2017
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Bajramov, R.K.
Physicochemistry of ultrafine (nano-) systems. Materials of X All-Russian Conference and Russian youth scientific school2012
Physicochemistry of ultrafine (nano-) systems. Materials of X All-Russian Conference and Russian youth scientific school2012
AbstractAbstract
No abstract available
Original Title
Dispergirovanie v impul'snykh razryadakh metallov, obrazuyushchikh na poverkhnosti oksidnye plenki s nizkim kontaktnym soprotivleniem
Primary Subject
Source
Rossijskij Fond Fundamental'nykh Issledovanij, Moscow (Russian Federation); Ministerstvo Obrazovaniya i Nauki Rossijskoj Federatsii, Moscow (Russian Federation); Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Nanotekhnologicheskoe Obshchestvo Rossii, Moscow, Zelenograd (Russian Federation); RNTs Kurchatovskij Inst., Moscow (Russian Federation); Yuzhnyj Federal'nyj Univ., Rostov-na-Donu (Russian Federation); NKTB P'ezopribor YuFU, Rostov-na-Donu (Russian Federation); 138 p; ISBN 978-5-9275-0997-3;
; 2012; p. 23-24; 10. All-Russian conference and Russian youth scientific school on physicochemistry of ultrafine (nano-) systems; Fizikokhimiya ul'tradispersnykh (nano-) sistem. X Vserossijskaya konferentsiya i Rossijskaya molodezhnaya nauchnaya shkola; Anapa (Russian Federation); 25-29 Sep 2012; 3 refs., 1 fig.

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AbstractAbstract
[en] The dependence of current on polarization is studied in the photoemission from the heterostructure of GaAs-(Al Ga)As in an electrostatic uniform external field in case of a slight doping of a p-type GaAs film. The photocurrent emission intensity is estimated as a function of the emitted electron beam polarization. For an electron beam with ρ=0,8 polarization, the emission current density can reach Ie∼10-3 A/cm2. It is shown that there are imposed upper restrictions on the light intensity, and lower restrictions on the acceptor density. 11 refs
Original Title
Otsenka plotnosti toka pri fotoehmissii ehlektronov vysokoj polyarizatsii iz geterostruktury GaAs-(AlGa)As v ehlektrostaticheskom odnorodnom vneshnem pole
Source
1991; 21 p
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Rahman, Atikur, E-mail: atikur@iiserpune.ac.in
Proceedings of the seventeenth international conference on thin films: abstracts2017
Proceedings of the seventeenth international conference on thin films: abstracts2017
AbstractAbstract
[en] Photovoltaic device performance depends on efficient conversion of absorbed photons to electronic charge. Any mismatch of refractive indices between air and the solar cell front surface results in reflection of incident sunlight and reduced device performance. We developed a new approach for texturing silicon surfaces over arbitrarily large areas, combining self-assembly of block copolymer thin films and plasma-based etching. This process creates densely packed arrays of sub-wavelength size cones, whose tapered profile grades the refractive index transition between air and bulk silicon. The gradual change in refractive index greatly reduces reflection at the air/silicon interface from more than 35 percent in a flat film to less than 1 percent over a broad wavelength range from 350 nm to 1000 nm. Also, due to the narrow tip diameter (<10 nm), these structures show robust superhydrophobic and antifogging properties. (author)
Source
CSIR-National Physical Laboratory, New Delhi (India); Indian Vacuum Society, Mumbai (India); 236 p; 2017; p. 34; ICTF-2017: 17. international conference on thin films; New Delhi (India); 13-17 Nov 2017
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AbstractAbstract
No abstract available
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(c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
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Profeti, Demetrius; Profeti, Luciene P.R.; Olivi, Paulo, E-mail: demetrius.profeti@ufes.br2018
AbstractAbstract
[en] Highlights: • The electrochemical synthesis of poly(o-methoxyaniline) (POMA) thin films was performed. • The concentration of monomer, and anodic charge influence the POMA film formation. • A relationship between the mass of the POMA, the anodic charge, and concentration of the OMA was established by EQCM studies. • The morphology of the films shows a compact first layer with spherical grains of different sizes distributed in this layer.
Primary Subject
Source
S0254058418302451; Available from http://dx.doi.org/10.1016/j.matchemphys.2018.03.075; Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
No abstract available
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Available from http://dx.doi.org/10.1070/PU1998v041n10ABEH000467; Abstract only; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Physics Uspekhi; ISSN 1063-7869;
; v. 41(10); p. 1045-1046

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Knez, Mato, E-mail: m.knez@nanogune.eu2012
AbstractAbstract
[en] Atomic layer deposition (ALD) is a mature technology for the deposition of conformal thin films. During the ALD process or in a post-treatment, a variety of diffusion phenomena can occur which can not only deteriorate the desired product, but also can be used to fabricate materials or structures in a novel way. This special issue reviews some of the observed diffusion processes and strategies to make use of those. (paper)
Source
Available from http://dx.doi.org/10.1088/0268-1242/27/7/074001; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] We study the impact of a drop of liquid onto a thin layer of the same liquid. We give an overview of the sequence of events that occur as the two most important dimensionless control parameters are varied. In particular, multiple cohorts of droplets can be ejected at different stages after impact due to different mechanisms. Edgerton's famous Milkdrop Coronet is only observed for a narrow range of parameters. Outside this range, the splash is either qualitatively different, or suffers from a much lower level of regularity. (cover illustration)
Primary Subject
Source
S0951-7715(08)62673-0; Available from http://dx.doi.org/10.1088/0951-7715/21/1/C01; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Nonlinearity (Print); ISSN 0951-7715;
; v. 21(1); p. C1-C11

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