[en] A semiemperical model is presented to calculate diamagnetic susceptibilities of organotin compounds. Diamagnetic susceptibilities are considered to be contributed by the atoms, bonds, and bond–bond interactions. An excellent agreement between semiemperically calculated and experimental values of diamagnetic susceptibilities is reported. (AIP)

[en] Published in summary form only

No abstract available

No abstract available

[en] This note aims at understanding the maximum allowable temperature at the hot spot during a quench in Nb3Sn accelerator magnets, through the analysis of experimental results previously presented. (author)

No abstract available

[en] A method of labelling red blood cells with technetium-99m is claimed, comprising; (i) mixing a blood sample with anticoagulant, stannous ion and buffer; (ii) adding saline to the mixture; (iii) centrifuging the mixture; (iv) separating the supernatant from the red blood cells; and (v) mixing radioactive pertechnetate and an oxidizing agent with the red blood cells. A kit for use in performing the method is also claimed, comprising a first receptacle containing an anticoagulant, stannous ion and a buffer, and a second receptacle containing an oxidizing agent

No abstract available

[en] The speciation of several tributyltin and triphenyltin compounds under varying salinity conditions (0, 20, 40 and 60%) was studied by Moessbauer spectroscopy in both anaerobic and aerobic Anacostia River sediments. The Moessbauer spectral parameters of the spiked sediments indicated that changes in the salinity did not affect the speciation of the tin compounds in either aerobic or anaerobic sediments.

[en] Highlights: ► These compounds are characterized as narrow band gap semiconductors with a maximum gap (1.27 eV) for ZnGeAs₂. ► A good agreement of band gaps with experiments is obtained within mBJLDA formalism. ► The band gap decreases with the substitution of either one or both cations in reference compound, ZnGeAs₂. ► The ionic/covalent character for A-As/B-As bond has been described on the basis of electro-negativity difference of the atoms. ► The d-states of transition metal, Zn are localized deeper in valence band (E < 5 eV), showing no effective role to decide the magnitude of semiconducting band gap. - Abstract: The electronic properties of ABAs₂ (A = Zn, Cd; B = Ge, Sn) compounds have been investigated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method with an aim to study the effect of changing local environment by substituting cation(s) with corresponding next group element in reference compound (ZnGeAs₂) on these properties. The exchange and correlation (XC) effects are taken into account by an orbital independent modified Becke–Johnson (mBJ) potential as coupled with Local Density Approximation (LDA) for these calculations. We predict a direct band gap in all these compounds and observe that the band gap decreases with the change of either one or both cations. The calculated band gaps are in better agreement with corresponding experimental ones as compared to other calculations. The electronic band structure is analyzed in terms of contributions from various electrons and the covalency of two bonds, Zn-As and Ge-As has been discussed with respect to substitutions.