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[en] This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb2O3/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or unipolar. Bipolar behavior exists after the positive forming process, while unipolar behavior exists after the negative forming process. Furthermore, the bipolar switching characteristics of the Pt/Yb2O3/TiN device can be affected by using a reverse polarity forming treatment, which not only reduces the set and reset voltage, but also improves the on/off ratio.
[en] Highlights: • Orthorhombic ZrTiO4 and amorphous Yb2O3 were confirmed by XRD and TEM. • Gate stack of ZrTiO4/Yb2O3 shows low Dit and a small fixed oxide charge density. • MOSFETs with 0.79-nm EOT and excellent sub-Vt swing of 66 mV/dec were realized. • Good reliability is proven by negligible ΔVt, Δgm and sub-Vt swing degradation. - Abstract: Dielectric stack composed of orthorhombic ZrTiO4 and amorphous Yb2O3 interfacial layer was employed as the gate dielectric for Si n-MOSFET. The gate stack with EOT of 0.79 nm demonstrates a desirable dielectric quality in terms of a low interface trap density (Dit) of 2.4 × 1011 cm−2 eV−1 and a small fixed oxide charge density of 2.8 × 1011 cm−2. The promising transistor characteristics are evidenced by the excellent subthreshold swing of 66 mV/dec and good electron mobility of 192 cm2/V s at 1 MV/cm. The former is primarily due to the low Dit value while the latter is ascribed to the small amount of fixed oxide charge and the existence of an Yb2O3 interfacial layer; both factors are beneficial to suppress the carrier remote scattering mechanism. From the analysis of positive bias temperature instability with the stress field of 11 MV/cm for 1000 s at 85 °C, 12-mV shift in threshold voltage and negligible degradation in subthreshold swing and transconductance prove the satisfactory reliability performance. These prominent electrical characteristics show that the crystalline-based gate stack is eligible for aggressively scaled CMOS devices
[en] Full text: The effect of electrolytic reduction of trivalent ytterbium in chloride medium was investigated. The influence of the most important parameters, concentration of Yb3+ and pH value of solution were studied experimentally. We can refine Yb2O3 product after electolyzing by 'alkaline process'. The experimental results shows that operation of the method was simple, rapid, economic and can prepare more than 99.90% Yb2O3 in industrial application
[en] The methods of thermographic X-ray phase and chemical analyses have been used to show that to prepare gadolinium and ytterbium gallate garnet, the method of component coprecipitation from the solution with their strictly stoichiometric ratio of 3:5 is the most suitable. A short-time heating of the coprecipitation product to the temperature of 750-800 deg is sufficient