Calculation of critical currents in Josephson Junctions
Description
We were able for the first time to calculate the critical current in a Josephson junction, under the influence of a magnetic field. This was accomplished for the general case and without any preliminary assumptions on the self-induced field. Based on these calculations, we were also able to retrieve the spatial distribution of the critical current in the junction, given its magnetic field dependence. The junction size can be large compared to the global penetration depth γJ, and the self induced field does not have to be neglected. The calculation of the critical current as a function of the external magnetic field, Ic(H), is based on the DC Josephson effect. Here the phase difference across the junction is related to the magnetic field. If the spatial distribution of the critical current, jc(x), is known, then Ic(H) = ∫-∞∞dx jc(x) exp{2πi F[jc(x)]} We can now calculate numerically a sample of critical currents for simulated distributions. Results can be compared very favourably with calculations made by others [2] under the assumption of a global penetration depth γJ. In addition, we use the spatial dependence of the penetration depth to yield more accurate results
Files
30022872.pdf
Files
(25.6 kB)
Name | Size | Download all |
---|---|---|
md5:ccdb2942e44c7ec9e46a5dbf0ab6e896
|
25.6 kB | Preview Download |
Additional details
Publishing Information
- Imprint Title
- Israel Physical Society 44. annual meeting. Program and abstracts
- Imprint Pagination
- 196 p.
- Journal Volume
- 44
- Series
- Bulletin of the Israel Physical Society
- Journal Page Range
- p. 55
- Report number
- INIS-IL--003
Conference
- Title
- 44. annual meeting of the Israel Physical Society
- Dates
- 8 Apr 1998
- Place
- Rehovot (Israel)
INIS
- Country of Publication
- Israel
- Country of Input or Organization
- Israel
- INIS RN
- 30022872
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRITICAL CURRENT; JOSEPHSON JUNCTIONS; SUPERCONDUCTIVITY
- Descriptors DEC
- CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Lead record
- 0cc7h-72679