Published 2007 | Version v1
Journal article

The study of nanosized semiconducting Nb doped Y-ZrO2

  • 1. Universiti Sains Malaysia, Nibong Tebal (Malaysia). School of Material and Mineral Resources Engineering
  • 2. Institut Teknologi Bandung, Bandung (Indonesia). Dept of Engineering Physics
  • 3. Toyohashi University of Technology, Toyohashi (Japan). Dept of Materials Science

Description

Tetragonal Y2O3 stabilized Zirconia (t-Y-ZrO2) powders were doped with Nb2O5 to seek a possibility if electronics doping would enhance the electronics conductivity of the insulating oxide. In this work Y2O3 was added as a stabilizer to produce tetragonal ZrO2 whereas Nb2O5 was added for the electronic doping. Several compositions of powders were prepared by thermal decomposition method and were post annealed at different temperatures. Precursor solutions were prepared from the mixture of zirconyl nitrate, yttrium nitrate and niobium tartarate as well as TEA (triethanolamine). The mixed solution were evaporated pyrolyzed and calcined to produce nanosized powders. The phase formation of the as-made powders was investigated by x-ray diffractometer. The additions of 7% Y2O3 were found to stabilize the tetragonal phase of zirconia. The addition of Nb2O5 did not alter the stability of the tetragonal phase but it was found that the conductivity of the material has changed. The band gap as measured by the UV-Visible Spectrometer gave a value in the range of 2.97 to 5.01 eV. XRD was also used to deduce the crystallite size (by using Scherer equation) and transmission electron microscopy was used to view the particle sizes and shapes. The Nb doped t-Y-ZrO2 prepared in this work was to be nanosized crystal with size ranges from 7 nm to 15 nm. (Author)

Additional details

Publishing Information

Journal Title
Journal of Nuclear and Related Technologies
Journal Volume
4
Journal Issue
1-2
Journal Page Range
p. 149-154
ISSN
1823-0180

Conference

Title
International Conference on X-ray and related Techniques in Research and Industry
Acronym
ICXRI-2006
Dates
29-30 Nov 2006
Place
Putrajaya (Malaysia)