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[en] The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in detail by combining experimental characteristics and two-dimensional numerical simulations. This structure allows an effective reduction of the kink effect and off-current, without introducing any additional series resistance. In addition, a substantial improvement in the device stability is also observed when compared to conventional TFT. The AF-TFT characteristics have been explained by considering a two transistor model.