Published July 2013 | Version v1
Journal article

On features of potential distribution in avalanche photodiodes with deeply buried pixels

  • 1. ANAS, Institute of Physics, Baku (Azerbaijan)
  • 2. Joint Institute of Nuclear Research, Dubna (Russian Federation)
  • 3. Azerbaijan National Aviation Academy, Bina (Azerbaijan)
  • 4. ANAS, Institute of Radiation Problems, Baku (Azerbaijan)

Description

The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried pixels is investigated. It was found that the electrons created in the photosensitive part of the device are collected to the corresponding n-pixel and multiplied in the avalanche region. At the same time the holes generated in the semiconductor substrate passes through the gaps between the n-pixels and therefore they are not amplified. This results in improvement the both signal/noise ratio and radiation resistance of the device

Additional details

Publishing Information

Journal Title
Fizika (Baku)
Journal Volume
19
Journal Issue
2
Journal Page Range
p. 17-19
ISSN
1028-8546