Published June 1, 2017 | Version v1
Journal article

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

  • 1. Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam 788010 (India)

Description

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d– V ds, I d- V gs, and C - V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/38/6/064002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
38
Journal Issue
6
Journal Page Range
[6 p.]
ISSN
1674-4926