Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
Creators
- 1. Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam 788010 (India)
Description
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d– V ds, I d- V gs, and C - V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/38/6/064002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 38
- Journal Issue
- 6
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49095136
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Quality check status
- Yes
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CAPACITANCE; DIFFUSION BARRIERS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDES; HEATING; MODULATION; SATURATION; SIMULATION; SWITCHES; TRANSISTORS; VELOCITY;
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES;