Low-temperature annealed ion conducting LiAIO₂ dielectric for ultra-low voltage and high-performance solution processed metal oxide thin film transistor

LiAIO₂, a very well-known ion conducting oxide material, is commonly used for solid state electrolyte for different applications including fuel cell and Li ion battery. Because of having its Li ion conducting nature, this LiAlO₂ shows high dielectric constant (k). Considering this advantage, LiAlO₂ has been utilized as a gate dielectric for low operating voltage metal oxide thin film transistor (TFT) fabrication which is not reported earlier. These device performances on p⁺⁺-Si substrate is superior to that of the previously reported device with sodium beta alumina (SBA) gate dielectric where the percentage of the mobile ion was comparatively much lower and required dielectric annealing temperature was >800°C