Solution processed Pb_0.8Ba_0.2Zr₁O₃ (lead barium zirconate) for IZO based metal oxide low voltage thin film transistor

A potential application in low-voltage thin film transistor (TFT) is achieved by using dielectric properties of lead barium zirconate (PBZ) thin film through solution processed. PBZ thin film is deposited on heavily doped Si substrate (p⁺-Si) by low cost sol-gel process. X-ray diffraction study shows that 8300°C temperature is suitable to achieve ferroelectric phase of PBZ which is fully oxidized and it used as a gate dielectric for TFT. The film are studied by UV-Vis absorption spectroscopy, atomic force microscopy (AFM), X-ray diffraction, capacitance measurements (C-f) and field effect measurements. Analysis reveals fully oxidized crystalline phase of sol-gel dielectric PBZ thin film exhibited a lower roughness 4.6 nm, high capacitance 65 nF and very low leakage current about 1μA/cm² solution processed IZO used as a channel semiconductor for bottom gate top contact geometry of TFT. The fabricated device require <5V operating voltage to saturate with high drain current which is very beneficial for low-power electronics because of its low operating voltage than SiO₂/IZO (-30V) transistor. The device shows on/off ratio 5 x 10³, subthreshold swing 0.45 V/decade with the electron mobility 3 cm³ V^-1 s^-1. These interesting results exhibit: the advantages and great potentials of the solution-processed ferroelectric PBZ thin film as gate dielectric for the construction of oxide electronics. (author)