[en] Layers of amorphous silicon have been obtained by irradiating single crystals of silicon with Ne⁺ and Ar⁺ ions at doses of 2-3x10¹⁷ and 6x10¹⁶ cm^-2 respectively, the energy of the Ne⁺ ions being 40 keV, and that of Ar⁺-50 keV. It has been found that the electric conductivity sigma of amorphous silicon changes nonmonotously with depth. At a depth of approximately 100 A a jump of sigma occurs, which is similar to the jump on the p-n transition. At the boundary of amorphous layer - single crystal substrate, a sharp change in conductivity is also observed. The layers obtained show an electric conductivity extremely high for amorphous silicon. In particular, for a thin near-surface layer (approximately 100 A) sigma approximately equal to 12 Ohm^-1xcm^-1. The nonmonotonous change of sigma with depth is due to the nonuniform distribution of paramagnetic centres in the layer. The high electric conductivity correlates well with the increased density of the indicated defects. It is shown that the most probable conductivity mechanism is conduction through states localized near the Fermi level. The width of the zone of the localized states is estimated as 0.2 eV