[en] A spectral photosensitivity of metal-semiconductor structures on the basis of zinc telluride is studied within the range of quantum energies of 0,5-2,7 keV. A metal layer (In, Pb, Cd, Zn, Bi) was impowdered on the surface of monocrystals in the vacuum of approximately 10^-5 Hg. The diffusion potential barrier h ght was eiermined for the structures under investigation according to the long-wave region of photosensitivity spectrum. The effective density of surface states on the interface of metal-semiconductor was estimated. The attained results show rather great density of surface states. These states in thermodynamic equilibrium are filled with electrons and ensure negative surface charge