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Ko, Wen-Chuang; Sawatzky, Erich.
International Business Machines Corp., New York (USA)1976
International Business Machines Corp., New York (USA)1976
AbstractAbstract
[en] This invention concerns the monitoring of the diameter of charged particle beams, particularly ion or electron beams utilised for ionic or electron beam writing (manufacture of integrated circuits). The process includes the focusing of the beam through a lens, then passing the focused beam through an envelope of conducting material, this envelope being spaced out from the beam and coaxial to it. A selected continuous potential is applied to the envelope. The beam diameter is then checked by modifying the potential applied to the envelope. In order to increase the diameter of the beam, the potential is altered so as to move it away from the potential of the earth. Conversely, to reduce the beam diameter the potential is altered by bringing it closer to the potential of the earth
[fr]
La presente invention concerne le controle du diametre de faisceaux de particules chargees, notamment les faisceaux d'ions ou d'electrons servant a l'ecriture par faisceaux ioniques ou a l'ecriture par faisceaux d'electrons (fabrication de circuits integres). Le procede comprend la focalisation du faisceau a travers une lentille, puis le passage du faisceau focalise a travers une enveloppe de materiau conducteur, cette enveloppe etant espacee du faisceau et coaxiale au faisceau. Un potentiel continu selectionne est applique a l'enveloppe. Le diametre du faisceau est alors controle par modification du potentiel applique a ladite enveloppe. Afin d'augmenter le diametre du faisceau on modifie le potentiel de facon a l'eloigner du potentiel de la masse. Inversement pour diminuer le diametre du faisceau on modifie le potentiel en le rapprochant du potentiel de la masseOriginal Title
Methode pour faire varier le diametre d'un faisceau de particules chargees
Primary Subject
Source
8 Nov 1976; 14 p; FR PATENT DOCUMENT 2335919/A/; Available from Institut National de la Propriete Industrielle, Paris (France); Priority claim: 15 Dec 1975, US.
Record Type
Patent
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