[en] The technological procedure for manufacturing γ-radiation germanium detectors of the germanium radiation detector type (GRD) is described. The initial material is represented by the germanium of n-type conductivity with the carrier concentration of (2-5)x10¹² cm^-3. After the acceptance inspection, the germanium blocks are cut into plates, 4.5 mm thick, which are then cut for production of crystals of 20 mm in diameter. The basic technological procedure consists in irradiation of the crystal by ⁶⁰Co with the total activity of 1.3x10⁴ Curie. Irradiation is discontinued when the region of the p-n-junction field reaches the n-contact and the capacitance of the crystal does not any longer depend on the applied voltage. The main operation during GRD manufacturing consists in barrier etching, which provides for low leakage currents and high breakdown voltages. A complete technological procedure for GRD manufacturing is described. The detectors manufactured in accordance with this procedure possess the following electro-physical parameters: energy resolution - 2.5-6.6 keV, operating voltage range - 100-2000 V, capacitance - 10-50 pF, sensitive region thickness - 0.7-3.5 mm