Application of the semiconductor detector ''dead'' layer technique for prooving possible diffusion control of interstitial impurities implanted in silicon by means of radiation defects

Korol', V.M.; Zastavnyj, A.V.

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Application of the semiconductor detector ''dead'' layer technique for prooving possible diffusion control of interstitial impurities implanted in silicon by means of radiation defects

Korol', V.M.; Zastavnyj, A.V.
Summaries of reports of 27. Conference on nuclear spectroscopy and nuclear structure1977

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AbstractAbstract

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Original Title

Primenenie metoda ''mertvykh'' sloev poluprovodnikovykh detektorov dlya dokazatel'stva vozmozhnosti upravleniya s pomoshch'yu radiatsionnykh defektov diffuziej implantirovannykh v kremnij mezhdouzel'nykh primesej; Pu²³⁸, Cm²⁴⁴

Primary Subject

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY (A1300)

Source

AN SSSR, Moscow; Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Moscow; AN Uzbekskoj SSR, Tashkent. Inst. Yadernoj Fiziki; p. 551-552; 1977; p. 551-552; 27. Annual conference on nuclear spectroscopy and nuclear structure; Tashkent, USSR; 22 - 25 Mar 1977; 1 table; short note.

Record Type

Miscellaneous

Literature Type

Conference

Country of publication

USSR

Descriptors (DEI)

DATA, DIFFUSION, HIGH TEMPERATURE, HIGH VACUUM, INTERSTITIALS, ION IMPLANTATION, ISOTOPES, KEV RANGE 10-100, LAYERS, PHYSICAL RADIATION EFFECTS, POTASSIUM IONS, SI SEMICONDUCTOR DETECTORS, SODIUM IONS

Descriptors (DEC)

ATOMIC IONS, CHARGED PARTICLES, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, ENERGY RANGE, INFORMATION, IONS, KEV RANGE, MEASURING INSTRUMENTS, POINT DEFECTS, RADIATION DETECTORS, RADIATION EFFECTS, SEMICONDUCTOR DETECTORS

LanguageLanguage

Russian

Reference NumberReference Number

10434436

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