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White, C.W.; Christie, W.H.; Eby, R.E.; Wang, J.C.; Young, R.T.; Clark, G.J.; Wood, R.F.
Oak Ridge National Lab., TN (USA)1976
Oak Ridge National Lab., TN (USA)1976
AbstractAbstract
[en] Secondary ion mass spectrometry has been used to study changes in the profile of 11B implanted into silicon and subsequently laser annealed using the Q-switched output of a ruby laser. Redistribution of the as-implanted profile is found to be pulse energy density and pulse number dependent. Calculation of the temperature profile shows that the surface region can be melted by the laser pulse, and theoretical profiles obtained by letting the as-implanted boron diffuse in liquid silicon are in good agreement with experimental results
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1976; 11 p; Conference on characterization techniques for semiconductor materials and devices; Seattle, WA, USA; 21 - 26 May 1976; Available from NTIS., PC A02/MF A01
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