[en] The sputtering yields of graphite, B₄C, SiC and TiC have been measured at normal incidences for H, D and ⁴He ions in the energy range between 100 and 8 keV. The yields are energy dependent and display a maximum for all target-ion combination in the energy range investigated. The maximum yield values are strongly dependent on the mass of the bombarding ions, but show only a weak influence on the target materials. The consequences of this behaviour for the potential use of these materials as a first wall are discussed under the assumption that plasma will be generated mainly by sputtering. Special emphasis in this discussion is given to the importance of the plasma edge temperature with respect to the choice of a first wall material and the relative advantage of the materials investigated compared to several metals (stainless steel, inconel, molybdenum). (Auth.)