[en] A comparison of the calculated rate of introduction of displacements into silicon irradiated by protons, neutrons, and electrons with the degradation constants of charge-carrier lifetimes published elsewhere and obtained in the paper has revealed that in case of proton irradiation, degradation is lower by a factor of several times than is expected in the case of additive summation of the contributions of disordering regions and elementary structural defects. Measurements have shown that in case of a successive irradiation of silicon samples by reactor neutrons and by 3.5 MeV electrons the lifetime of nonequilibrium carriers in samples subjected only to electron irradiation is shorter by a factor of 2 to 3 than that in similar samples irradiated by both neutrons and electrons. The results obtained are explained by interaction of the vacancies introduced by electron irradiation with the electric field surrounding the disordered regions. Estimations have been made in terms of the model assuming that recombination centers are formed only in the part of a crystal that was previously irradiated by neutrons