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AbstractAbstract
[en] Formation kinetics calculation of radiation defects in semiconductors was carried out for the practically important case of successive capture of several primary defects of the same type by impurity atoms. It is shown that such a model is optimal for describing the experimentally observed kinetics of defect formation in germanium doped with 5th-group impurities under the conditions of gamma radiation at room temperature
Original Title
Kinetika obrazovaniya defektov v poluprovodnikakh pri posledovatel'nom zakhvate neskol'kikh vakansij atomom primesi
Source
For English translation see the journal Sov. Phys. - Semicond.
Record Type
Journal Article
Journal
Fizika i Tekhnika Poluprovodnikov; v. 12(2); p. 293-298
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