[en] The segregation coefficients have been determined for the process of epitaxial growth of unalloyed layers of Insub(x)Gasub(1-x)As with 0(<=)x(<=)0.1 and orientation (100) from solutions-melts at an initial epitaxy temperature 600-850 deg C, the cooling rate 0.5-5.0 deg./m, and cooling duration 5-45 minutes. The content of In and Ga in a solid phase and their distribution along the epitaxial layer thickness have been determined by the method of local X-ray spectral analysis. It has been established that technological conditions affect essentially the process of crystallization from liquid phase. By choosing the proper technological conditions, one can directionally affect the distribution character of the solid solution components along the epitaxial layer thickness, that is to obtain different concentration profiles