Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.015 seconds
Ponpon, J.P.; Siffert, P.
Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires1976
Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires1976
AbstractAbstract
[en] The formation of the potential barrier at the metal-silicon contact has been investigated. Special emphazis was given to the study of ageing of gold-N type silicon Schottky diodes, showing that their electrical properties are directly correlated to oxygen diffusion through the metal. A phenomenological model based on the behavior of oxygen with respect to the metal involved is proposed to describe the ageing for any metal deposited on N or P type silicon
Source
1976; 32 p
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue