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Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.
Oak Ridge National Lab., TN (USA)1978
Oak Ridge National Lab., TN (USA)1978
AbstractAbstract
[en] Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron
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Source
1978; 30 p; 2. international conference on neutron transmutation doping of semi-conductors; Columbus, MO, USA; 23 - 26 Apr 1978; Available from NTIS., PC A03/MF A01
Record Type
Report
Literature Type
Conference
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Country of publication
BORON ISOTOPES, CRYSTAL STRUCTURE, ELEMENTS, ENRICHED URANIUM REACTORS, HEAT TREATMENTS, ISOTOPES, LI-DRIFTED DETECTORS, LIGHT NUCLEI, LITHIUM ISOTOPES, MEASURING INSTRUMENTS, NUCLEI, ODD-EVEN NUCLEI, ODD-ODD NUCLEI, PHOSPHORUS ISOTOPES, PHYSICAL PROPERTIES, POOL TYPE REACTORS, RADIATION DETECTORS, RADIATION EFFECTS, REACTORS, RESEARCH AND TEST REACTORS, RESEARCH REACTORS, SEMICONDUCTOR DETECTORS, SEMIMETALS, SI SEMICONDUCTOR DETECTORS, STABLE ISOTOPES, THERMAL REACTORS, WATER COOLED REACTORS, WATER MODERATED REACTORS
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