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Engstrom, H.; Bates, J.B.; Young, R.T.; Noonan, J.R.; White, C.W.
Oak Ridge National Lab., TN (USA)1978
Oak Ridge National Lab., TN (USA)1978
AbstractAbstract
[en] Raman and infrared absorption spectra have been obtained for boron implanted, pulse laser annealed silicon. Measurement of the shift in the silicon optic mode due to a Fano interaction have yielded a value of the utilization coefficient of 0.89 +- 0.09 for a sample implanted with 1016 ions/cm2. Low energy infrared absorption is attributed mainly to interband transitions although other processes seem to be taking place as well
Original Title
35 keV 11B ions
Primary Subject
Source
Nov 1978; 6 p; AIP conference on laser-solid interactions and laser processing; Boston, MA, USA; 28 Nov - 1 Dec 1978; Available from NTIS., PC A02/MF A01
Record Type
Report
Literature Type
Conference
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