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Gailliard, J.P.; Lucas, C.; Loualiche, S.; Baruch, P.; Pfister, J.C.; Truche, R.
CEA Centre d'Etudes Nucleaires de Fontenay-aux-Roses, 92 (France). Services d'Etudes Chimiques et d'Analyse1978
CEA Centre d'Etudes Nucleaires de Fontenay-aux-Roses, 92 (France). Services d'Etudes Chimiques et d'Analyse1978
AbstractAbstract
[en] Proton irradiation enhanced diffusion (PIED) experiments have been performed on various initial boron profiles. Analytical calculations and numerical simulations using a two species model and bimolecular recombination give a good fit to these results assuming that impurities act as recombination centers for defects and yield information on properties of the defects responsible for the observed effects
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3 Aug 1978; 19 p; 10. International conference on defects and radiation effects in semiconductors; Nice, France; 11 - 14 Sep 1978
Record Type
Report
Literature Type
Conference; Numerical Data
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