[en] The activation energy for the 0.2 T/sub m/ resistivity annealing stage in neutron-irradiated vanadium containing 61 wt ppM O was determined to be 1.21 +- 0.06 eV. This value is reasonably close to the oxygen diffusion activation energy in V of 1.26 to 1.28 eV. An extrinsic mechanism for the 0.2 T/sub m/ annealing stage is indicated, involving O migration and trapping at radiation-produced defect clusters. A simple saturable trap model for the trapping of interstitial impurity atoms at radiation-produced defect clusters is described. The model is applied to the isothermal annealing curves for V containing O. A good fit to the shape of the annealing curves is obtained and approximate agreement to the measured activation energy is found. However, the model appears to overestimate the amount of O participating in the trapping process