[en] A new technology for simultaneous Boron and Phosphorus diffusions has been realized. This technology has two advantages: it subsitutes expansive high doses ion implantations and it simplifies the whole technology, because Boron and Phosphorus diffusions are simultaneous. A low temperature deposition of Phosphorus doped silicon oxide is used and then a classical Boron diffusion. The radioactivation techniques allowed us to qualify the whole technology and to determine the appropriate conditions to be used for the Phosphorus solid-solid diffusion