[en] The possibility exists that I²L circuits may be employed in systems which are required to operate properly during or immediately following a neutron irradiation pulse. Therefore, it is necessary that the active response of the individual I²L gate to such neutron irradiation be known. A series of experiments has been performed at room temperature to determine both the passive and active response of I²L gates to neutrons from the SPR reactor at Sandia Laboratories. The data obtained from these experiments has been used to obtain an Annealing Factor (AF) in the same manner that has been done previously for discrete bipolar transistors. The annealing factor can be used to predict the ratio of damage which is present immediately after a neutron burst to that damage obtained from passive neutron irradiation experiments