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Thomas, J.P.; Fallavier, M.
Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire1979
Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire1979
AbstractAbstract
[en] Using 2 MeV lithium ions backscattering and transmission electron microscopy techniques, a part of xenon atoms introduced by implantation in aluminium metal under the initial oxide layer is shown to be tranported by the moving metal-oxide interface during anodic oxidation. From specific anodization conditions (V sup(ct), T = 900C) this splitting of the initial xenon distribution is interpreted in terms of bubble formation and growth above a given local concentration threshold. A schematic model for this behaviour evolution is proposed. This dose dependance is of practical interest in the determination of transport numbers. Although unambiguously measured they may be subject to significant systematic uncertainties which are discussed
Source
Apr 1979; 22 p
Record Type
Report
Literature Type
Numerical Data
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ATOMIC IONS, CHARGED PARTICLES, CHEMICAL COATING, CHEMICAL REACTIONS, CORROSION PROTECTION, DATA, DATA FORMS, DEPOSITION, ELECTROCHEMICAL COATING, ELECTROLYSIS, ELEMENTS, INFORMATION, IONS, METALS, NEUTRAL-PARTICLE TRANSPORT, NONMETALS, NUMERICAL DATA, RADIATION TRANSPORT, RARE GASES, SURFACE COATING
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