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AbstractAbstract
[en] The spermatogonial cell renewal system can maintain function and a steady level of cell population for relatively long periods of continuous low-level irradiation indicating that there does not appear to be a serious accumulation, over many generations, of damage affecting proliferation. Provided the dose-rate is quite low, there is an effective selective removal of damaged cells with almost complete repair of cellular nonlethal damage. At dose-rates greater than 2 rad/day, spermatogonia are very sensitive to radiation death, and the main reason for the low tolerance to continuous stress could, in part, be the limited extent of compensatory mechanisms regulating spermatogonial cell production. However, there is some capacity to change the patterns of cellular proliferation while still remaining under homeostatic control, and this capacity appears to reside in the relatively radioresistant A/sub s/ stem-cell population. Little is known about the extent to which the spermatogonial cell population can repair nonlethal cellular radiation damage accumulated under continuous stress affecting the regenerative capacity of the tissue. After acute exposure, a minimum number of surviving type A/sub s/ stem-cells are required to repopulate the functional seminiferous epithelium, regeneration proceeds along an ordered cell stage sequence, and is dependent on the time required for all stages from type A/sub s/ spermatogonia to mature spermatozoa. Under continuous irradiation, provided the dose-rate is not too high, the repopulating ability of the seminiferous epithelium is maintained, in the presence of injury, due to initial repair and long-term repair of cellular radiation damage. There is evidence for initial repair, since a dose-rate effect exists in type A survival, at low doses. Long-term repair occurs due to differential radiosensitivities of spermatogonia
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Source
May 1979; 11 p; 6. international congress symposium on radiation research and stem cells; Tokyo, Japan; 13 - 19 May 1979; CONF-790524--13; Available from NTIS., PC A02/MF A01
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Conference
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