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[en] A numerical analysis, backed by analytic solutions for some cases, is used to study the dependence of the base component of current gain and delay time in base implanted bipolar transistors on the base impurity profile. Results are presented in normalised form to facilitate their use in predicting device performance during the processing-device design stage. (author)
Journal
Solid-State Electronics; ISSN 0038-1101; 
; v. 24(4); p. 371-375
; v. 24(4); p. 371-375