[en] For the 8H(44) structure, the effect was estimated of all the possible 23 types of stacking upon broadening of Δω(h₃), shifts of Δh₃(h₃) and changes in maximal intensity, Isub(max)(h₃), of peaks of monocrystalline reflections for h₃=8M+-1, +-2, +-3, +-4. The coefficients of characteristic equation and the boundary conditions were calculated by the method given by Prasad and Lele, after adapting it in the work reported here, to the 8H(44) structure. The values Δh₃(h₃), Δω(h₃) and Isub(max)(h₃) were calculated according to the formulae derived in an earlier paper. On the strength of the results obtained, a new method is given for analyzing the stacking faults occurring in polytype 8H(44) structures. For the above-mentioned structures these results are compared with theoretical curves of the intensity distribution on 10.1 orders of X-ray diagrams, the curves being obtained by the method of model analysis. Moreover, the examples are given of X-ray diagrams occurring in ZnSe+Mn crystals as well as of analysis of stacking faults in these crystals. (author)