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[en] In the TmSesub(1-x)Tesub(x) pseudobinary compounds a transition from semiconductor to metal (SMT) with intermediate Tm valence is observed in function of composition. The pressure induced SMT is investigated for TmSesub(0.17)Tesub(0.83) in a continuous measurement of the electrical resistivity and the specific volume on the same single crystal up to 3.5 GPa (= 35 kbar). The SMT around 2 GPa is continuous and above this pressure the Tm ions are in an intermediate valent metallic state. (author)
Journal
Solid State Communications; ISSN 0038-1098; 
; v. 38(1); p. 75-77
; v. 38(1); p. 75-77