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[en] Thin films (approx.1 mm) of large-grained (approx.40 mm x approx.40 mm) InP were epitaxially deposited on low-cost recrystallized CdS substrates at 280 0C by planar reactive deposition. Large grains of CdTe (approx.40 mm) were also deposited on similar substrates at 460 0C by physical vapor deposition. Typically, the recrystallized CdS grain size is about 40 mm. However, grains with dimensions up to 300 mm were observed
Journal
Journal of Applied Physics; ISSN 0021-8979; 
; v. 52(3); p. 1524-1527
; v. 52(3); p. 1524-1527