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[en] The fabrication of a 1-cm2 (CH)/sub x/:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn>2.8 eV) is reported. Device characteristics are presented. The effect of oxygen contamination is also discussed
Journal
Applied Physics Letters; ISSN 0003-6951; 
; v. 38(7); p. 555-557
; v. 38(7); p. 555-557